Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes
Hayashi, Shohei, Yamashita, Tamotsu, Senzaki, Junji, Miyazato, Masaki, Ryo, Mina, Miyajima, Masaaki, Kato, Tomohisa, Yonezawa, Yoshiyuki, Kojima, Kazutoshi, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p-i-n diodes
Okada, Aoi, Nishio, Johji, Iijima, Ryosuke, Ota, Chiharu, Goryu, Akihiro, Miyazato, Masaki, Ryo, Mina, Shinohe, Takashi, Miyajima, Masaaki, Kato, Tomohisa, Yonezawa, Yoshiyuki, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
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Journal Article
Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p-i-n diodes
Hayashi, Shohei, Naijo, Takanori, Yamashita, Tamotsu, Miyazato, Masaki, Ryo, Mina, Fujisawa, Hiroyuki, Miyajima, Masaaki, Senzaki, Junji, Kato, Tomohisa, Yonezawa, Yoshiyuki, Kojima, Kazutoshi, Okumura, Hajime
Published in Applied physics express (01.08.2017)
Published in Applied physics express (01.08.2017)
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Journal Article
Suppression of the forward degradation in 4H-SiC PiN diodes by employing a recombination-enhanced buffer layer
Tawara, Takeshi, Miyazawa, Tetsuya, Ryo, Mina, Miyazato, Masaki, Fujimoto, Takumi, Takenaka, Kensuke, Matsunaga, Shinichiro, Miyajima, Masaaki, Otsuki, Akihiro, Yonezawa, Yoshiyuki, Kato, Tomohisa, Okumura, Hajime, Kimoto, Tsunenobu, Tsuchida, Hidekazu
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Screening of metal flux for SiC solution growth by a thin-film combinatorial method
Yonezawa, Yoshiyuki, Ryo, Mina, Takigawa, Aki, Matsumoto, Yuji
Published in Science and technology of advanced materials (01.10.2011)
Published in Science and technology of advanced materials (01.10.2011)
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Journal Article
Novel Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device Fabrication
Fujiwara, Takanori, Tanigaki, Yugo, Furukawa, Yukihiro, Tonari, Kazuhiro, Otsuki, Akihiro, Imai, Tomohiro, Oose, Naoyuki, Utsumi, Makoto, Ryo, Mina, Gotoh, Masahide, Nakamata, Shinichi, Sakai, Takao, Sakai, Yoshiyuki, Miyajima, Masaaki, Kumura, Hiroshi, Fukuda, Kenji, Okumura, Hajime
Published in Journal of Photopolymer Science and Technology (01.01.2014)
Published in Journal of Photopolymer Science and Technology (01.01.2014)
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Journal Article
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
UCHIUMI MAKOTO, GOTO MASAHIDE, HOSHI YASUYUKI, HARADA YUICHI, SAKAI YOSHIYUKI, IWATANI MASANOBU, RYO MINA
Year of Publication 21.09.2017
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Year of Publication 21.09.2017
Patent
SILICON CARBIDE SEMICONDUCTOR DEVICE DRIVING METHOD AND SILICON CARBIDE SEMICONDUCTOR DEVICE DRIVING CIRCUIT
MIYAJIMA MASAAKI, TAKENAKA KENSUKE, FUJIMOTO TAKUMI, TAWARA TAKESHI, TSUCHIDA SHUICHI, MIYASATO MAKI, YONEZAWA YOSHIYUKI, OTSUKI AKIHIRO, RYO MINA
Year of Publication 11.01.2018
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Year of Publication 11.01.2018
Patent
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
HOSHI, YASUYUKI, KINOSHITA, AKIMASA, SAKAI, YOSHIYUKI, HARADA, YUICHI, IWAYA, MASANOBU, RYO, MINA
Year of Publication 28.01.2016
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Year of Publication 28.01.2016
Patent