The Trench Power MOSFET-Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability
Williams, Richard K., Darwish, Mohamed N., Blanchard, Richard A., Siemieniec, Ralf, Rutter, Phil, Kawaguchi, Yusuke
Published in IEEE transactions on electron devices (01.03.2017)
Published in IEEE transactions on electron devices (01.03.2017)
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Journal Article
Low voltage superjunction power MOSFET: An application optimized technology
Rutter, P, Peake, S T
Published in 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2011)
Published in 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2011)
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Conference Proceeding
Optimizing the trade-off between the RDS(on) of power MOSFETs and linear mode perfomance by local modification of MOSFET gain
Mo-Huai Chang, Rutter, Phil
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
The Impact of Trench Depth on the Reliability of Repetitively Avalanched Low-Voltage Discrete Power Trench nMOSFETs
Alatise, Olayiwola, Kennedy, Ian, Petkos, George, Heppenstall, Keith, Parkin, Jim, Khan, Khalid, Koh, Adrian, Rutter, Phil
Published in IEEE electron device letters (01.07.2010)
Published in IEEE electron device letters (01.07.2010)
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Journal Article