Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film
Li, Yang, Zhao, Yun, Wei, Tongbo, Liu, Zhiqiang, Duan, Ruifei, Wang, Yunyu, Zhang, Xiang, Wu, QingQing, Yan, Jianchang, Yi, Xiaoyao, Yuan, Guodong, Wang, Junxi, Li, Jimin
Published in Japanese Journal of Applied Physics (01.08.2017)
Published in Japanese Journal of Applied Physics (01.08.2017)
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High-quality semipolar GaN grown on carbon nanotube-patterned sapphire by hydride vapor phase epitaxy
Yang, Jiankun, Wei, Tongbo, Wei, Yang, Huo, Ziqiang, Yan, Jianchang, Duan, Ruifei, Wang, Junxi, Li, Jinmin
Published in Japanese Journal of Applied Physics (01.12.2018)
Published in Japanese Journal of Applied Physics (01.12.2018)
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Investigations on the wettability of graphene on a micron-scale hole array substrate
Zhao, Yun, Wang, Gang, Huang, Wenbin, Fan, Xiaokun, Deng, Ya, Zhang, Jian, Wei, Tongbo, Duan, Ruifei, Wang, Junxi, Sun, Lianfeng
Published in RSC advances (01.01.2016)
Published in RSC advances (01.01.2016)
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Defect reduction in semipolar {101&cmb.macr;3&cmb.macr;} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth
Yang, Jiankun, Wei, Tongbo, Huo, Ziqiang, Zhang, Yonghui, Hu, Qiang, Wei, Xuecheng, Sun, Baojuan, Duan, Ruifei, Wang, Junxi
Published in CrystEngComm (01.01.2014)
Published in CrystEngComm (01.01.2014)
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Growth and optical properties of gallium nitride film on glass substrates
An, Pingbo, Zhao, Lixia, Zhang, Shuo, Liu, Lei, Duan, Ruifei, Wei, Xuecheng, Lu, Hongxi, Wang, Junxi, Li, Jinmin
Published in Physica status solidi. C (01.05.2016)
Published in Physica status solidi. C (01.05.2016)
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Hydride vapor phase epitaxy of high quality {101̄3̄} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres
Yang, Jiankun, Wei, Tongbo, Huo, Ziqiang, Hu, Qiang, Zhang, Yonghui, Duan, Ruifei, Wang, Junxi
Published in Journal of crystal growth (01.02.2014)
Published in Journal of crystal growth (01.02.2014)
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Investigation of Efficiency and Droop Behavior Comparison for InGaN/GaN Super Wide-Well Light Emitting Diodes Grown on Different Substrates
Wei, Tongbo, Zhang, Lian, Ji, Xiaoli, Wang, Junxi, Huo, Ziqiang, Sun, Baojun, Hu, Qiang, Wei, Xuecheng, Duan, Ruifei, Zhao, Lixia, Zeng, Yiping, Li, Jinmin
Published in IEEE photonics journal (01.12.2014)
Published in IEEE photonics journal (01.12.2014)
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Producing deep UV-LEDs in high-yield MOVPE by improving AlN crystal quality with sputtered AlN nucleation layer
Du, Zejie, Duan, Ruifei, Wei, Tongbo, Zhang, Shuo, Wang, Junxi, Yi, Xiaoyan, Zeng, Yiping, Ran, Junxue, Li, Jinmin, Dong, Boyu
Published in Journal of semiconductors (01.11.2017)
Published in Journal of semiconductors (01.11.2017)
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Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
Wei, Tongbo, Duan, Ruifei, Wang, Junxi, Li, Jinmin, Huo, Ziqiang, Yang, Jiankun, Zeng, Yiping
Published in Japanese Journal of Applied Physics (01.05.2008)
Published in Japanese Journal of Applied Physics (01.05.2008)
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Journal Article
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy
Hu, Qiang, Wei, Tongbo, Duan, Ruifei, Yang, Jiankun, Huo, Ziqiang, Zeng, Yiping, Xu, Shu
Published in Materials science in semiconductor processing (01.02.2012)
Published in Materials science in semiconductor processing (01.02.2012)
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Journal Article
Enhancement of Exciton–Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation
Ding, Kai, Zeng, Yiping, Duan, Ruifei, Wei, Xuecheng, Wang, Junxi, Ma, Ping, Lu, Hongxi, Cong, Peipei, Li, Jinmin
Published in Japanese Journal of Applied Physics (01.02.2009)
Published in Japanese Journal of Applied Physics (01.02.2009)
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Journal Article
Semipolar (11–22) AlN Grown on m‑Plane Sapphire by Flow-Rate Modulation Epitaxy for Vacuum-Ultraviolet Photodetection
Yang, Jiankun, Gao, Yaqi, Zheng, Wei, He, Rui, Huo, Ziqiang, Ji, Xiaoli, Ran, Junxue, Duan, Ruifei, Wang, Junxi, Li, Jinmin, Wei, Tongbo
Published in Crystal growth & design (02.03.2022)
Published in Crystal growth & design (02.03.2022)
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Journal Article
Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy
Su, Jie, Liang, Dongdong, Zhao, Yun, Yang, Jiankun, Chang, Hongliang, Duan, Ruifei, Wang, Junxi, Sun, Lianfeng, Wei, Tongbo
Published in Applied surface science (01.10.2020)
Published in Applied surface science (01.10.2020)
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Positron annihilation study of the O-T phase transition for Eu1+xBa2-xCu3O7-δ superconductors
YANG LI, YANG LIU, RUIFEI DUAN, XIAOTAO XIONG, BAOYI WANG, GUOHUI CAO, LONG WEI, ZHENG, D. N, ZHAO, Z. X, ROSS, Joseph H
Published in Physica. C, Superconductivity (01.02.2004)
Published in Physica. C, Superconductivity (01.02.2004)
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Silicon Doping Induced Increment of Quantum Dot Density
Duan, Ruifei, Wang, Baoqiang, Zhu, Zhanping, Zeng, Yiping
Published in Japanese Journal of Applied Physics (2003)
Published in Japanese Journal of Applied Physics (2003)
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Journal Article
Lattice Selective Growth of Graphene on Sapphire Substrate
Wang, Gang, Zhao, Yun, Deng, Ya, Huang, Wenbin, Fan, Xiaokun, Zhang, Jian, Duan, Ruifei, Sun, Lianfeng
Published in Journal of physical chemistry. C (08.01.2015)
Published in Journal of physical chemistry. C (08.01.2015)
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Journal Article
Green light emitting diode grown on thick strain-reduced GaN template
Yang, Jiankun, Wei, Tongbo, Hu, Qiang, Huo, Ziqiang, Sun, Baojuan, Duan, Ruifei, Wang, Junxi
Published in Materials science in semiconductor processing (01.01.2015)
Published in Materials science in semiconductor processing (01.01.2015)
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