Low temperature, high strength, wafer-to-wafer bonding
FLEMING, J. G, ROHERTY-OSMUN, E, GODSHALL, N. A
Published in Journal of the Electrochemical Society (01.11.1992)
Published in Journal of the Electrochemical Society (01.11.1992)
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Journal Article
Growth and properties of W–Si–N diffusion barriers deposited by chemical vapor deposition
Fleming, J.G, Roherty-Osmun, E, Smith, Paul Martin, Custer, Jonathan S, Kim, Y.-D, Kacsich, T, Nicolet, M.-A, Galewski, C.J
Published in Thin solid films (04.05.1998)
Published in Thin solid films (04.05.1998)
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Journal Article
Conference Proceeding
TDDB and Pulse-Breakdown Studies of Si-Rich \hbox Antifuses and Antifuse-Based ROMs
Kaplar, R J, Habermehl, S D, Apodaca, R T, Havener, B, Roherty-Osmun, E
Published in IEEE transactions on electron devices (01.01.2011)
Published in IEEE transactions on electron devices (01.01.2011)
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Journal Article
Single-chip precision oscillators based on multi-frequency, high-Q aluminum nitride MEMS resonators
Wojciechowski, K.E., Olsson, R.H., Tuck, M.R., Roherty-Osmun, E., Hill, T.A.
Published in TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference (01.06.2009)
Published in TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference (01.06.2009)
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Conference Proceeding