Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs
Greco, G., Fiorenza, P., Giannazzo, F., Vivona, M., Venuto, C., Iucolano, F., Roccaforte, F.
Published in IEEE electron device letters (01.10.2024)
Published in IEEE electron device letters (01.10.2024)
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Journal Article
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
Vivona, M., Fiorenza, P., Scuderi, V., La Via, F., Giannazzo, F., Roccaforte, F.
Published in Applied physics letters (14.08.2023)
Published in Applied physics letters (14.08.2023)
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Journal Article
Recent advances on dielectrics technology for SiC and GaN power devices
Roccaforte, F., Fiorenza, P., Greco, G., Vivona, M., Lo Nigro, R., Giannazzo, F., Patti, A., Saggio, M.
Published in Applied surface science (15.05.2014)
Published in Applied surface science (15.05.2014)
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Journal Article
Conference Proceeding
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer
Greco, G., Di Franco, S., Lo Nigro, R., Bongiorno, C., Spera, M., Badalà, P., Iucolano, F., Roccaforte, F.
Published in Applied physics letters (01.01.2024)
Published in Applied physics letters (01.01.2024)
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Journal Article
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
Vivona, M, Greco, G, Bellocchi, G, Zumbo, L, Di Franco, S, Saggio, M, Rascunà, S, Roccaforte, F
Published in Journal of physics. D, Applied physics (04.02.2021)
Published in Journal of physics. D, Applied physics (04.02.2021)
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Journal Article
Nanoscale transport properties at silicon carbide interfaces
Roccaforte, F, Giannazzo, F, Raineri, V
Published in Journal of physics. D, Applied physics (09.06.2010)
Published in Journal of physics. D, Applied physics (09.06.2010)
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Journal Article
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
Schilirò, E., Lo Nigro, R., Panasci, S.E., Gelardi, F.M., Agnello, S., Yakimova, R., Roccaforte, F., Giannazzo, F.
Published in Carbon (New York) (01.11.2020)
Published in Carbon (New York) (01.11.2020)
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Journal Article
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Vivona, M, Greco, G, Spera, M, Fiorenza, P, Giannazzo, F, La Magna, A, Roccaforte, F
Published in Journal of physics. D, Applied physics (04.11.2021)
Published in Journal of physics. D, Applied physics (04.11.2021)
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Journal Article
Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress
Fiorenza, P, Alessandrino, M S, Carbone, B, Di Martino, C, Russo, A, Saggio, M, Venuto, C, Zanetti, E, Giannazzo, F, Roccaforte, F
Published in Nanotechnology (20.03.2020)
Published in Nanotechnology (20.03.2020)
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Journal Article
Graphene p‑Type Doping and Stability by Thermal Treatments in Molecular Oxygen Controlled Atmosphere
Piazza, A, Giannazzo, F, Buscarino, G, Fisichella, G, Magna, A. La, Roccaforte, F, Cannas, M, Gelardi, F.M, Agnello, S
Published in Journal of physical chemistry. C (01.10.2015)
Published in Journal of physical chemistry. C (01.10.2015)
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Journal Article
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
Giannazzo, F, Dagher, R, Schilirò, E, Panasci, S E, Greco, G, Nicotra, G, Roccaforte, F, Agnello, S, Brault, J, Cordier, Y, Michon, A
Published in Nanotechnology (01.01.2021)
Published in Nanotechnology (01.01.2021)
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Journal Article
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures
Greco, G, Di Franco, S, Bongiorno, C, Grzanka, E, Leszczynski, M, Giannazzo, F, Roccaforte, F
Published in Semiconductor science and technology (01.10.2020)
Published in Semiconductor science and technology (01.10.2020)
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Journal Article
Graphene integration with nitride semiconductors for high power and high frequency electronics
Giannazzo, F., Fisichella, G., Greco, G., La Magna, A., Roccaforte, F., Pecz, B., Yakimova, R., Dagher, R., Michon, A., Cordier, Y.
Published in Physica status solidi. A, Applications and materials science (01.04.2017)
Published in Physica status solidi. A, Applications and materials science (01.04.2017)
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Journal Article
Critical issues for interfaces to p-type SiC and GaN in power devices
Roccaforte, F., Frazzetto, A., Greco, G., Giannazzo, F., Fiorenza, P., Nigro, R. Lo, Saggio, M., Leszczyński, M., Pristawko, P., Raineri, V.
Published in Applied surface science (15.08.2012)
Published in Applied surface science (15.08.2012)
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Journal Article
Conference Proceeding
Surface and interface issues in wide band gap semiconductor electronics
Roccaforte, F., Giannazzo, F., Iucolano, F., Eriksson, J., Weng, M.H., Raineri, V.
Published in Applied surface science (15.07.2010)
Published in Applied surface science (15.07.2010)
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Journal Article
Conference Proceeding
Comparative study of gate oxide in 4H-SiC lateral MOSFETs subjected to post-deposition-annealing in N2O and POCl3
Fiorenza, P., Swanson, L. K., Vivona, M., Giannazzo, F., Bongiorno, C., Frazzetto, A., Roccaforte, F.
Published in Applied physics. A, Materials science & processing (01.04.2014)
Published in Applied physics. A, Materials science & processing (01.04.2014)
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Journal Article