β-Gallium oxide power electronics
Green, Andrew J., Speck, James, Xing, Grace, Moens, Peter, Allerstam, Fredrik, Gumaelius, Krister, Neyer, Thomas, Arias-Purdue, Andrea, Mehrotra, Vivek, Kuramata, Akito, Sasaki, Kohei, Watanabe, Shinya, Koshi, Kimiyoshi, Blevins, John, Bierwagen, Oliver, Krishnamoorthy, Sriram, Leedy, Kevin, Arehart, Aaron R., Neal, Adam T., Mou, Shin, Ringel, Steven A., Kumar, Avinash, Sharma, Ankit, Ghosh, Krishnendu, Singisetti, Uttam, Li, Wenshen, Chabak, Kelson, Liddy, Kyle, Islam, Ahmad, Rajan, Siddharth, Graham, Samuel, Choi, Sukwon, Cheng, Zhe, Higashiwaki, Masataka
Published in APL materials (01.02.2022)
Published in APL materials (01.02.2022)
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Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications
Grassman, T J, Brenner, M R, Gonzalez, M, Carlin, A M, Unocic, R R, Dehoff, R R, Mills, M J, Ringel, S A
Published in IEEE transactions on electron devices (01.12.2010)
Published in IEEE transactions on electron devices (01.12.2010)
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Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies
Ghadi, Hemant, McGlone, Joe F., Cornuelle, Evan, Senckowski, Alexander, Sharma, Shivam, Wong, Man Hoi, Singisetti, Uttam, Frodason, Ymir Kalmann, Peelaers, Hartwin, Lyons, John L., Varley, Joel B., Van de Walle, Chris G., Arehart, Aaron, Ringel, Steven A.
Published in APL materials (01.11.2023)
Published in APL materials (01.11.2023)
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Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3
Farzana, Esmat, Chaiken, Max F., Blue, Thomas E., Arehart, Aaron R., Ringel, Steven A.
Published in APL materials (01.02.2019)
Published in APL materials (01.02.2019)
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Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β−Ga2O3
Johnson, Jared M, Chen, Zhen, Varley, Joel B, Jackson, Christine M, Esmat Farzana, Zhang, Zeng, Arehart, Aaron R, Hsien-Lien Huang, Genc, Arda, Ringel, Steven A, Chris G. Van de Walle, Muller, David A, Hwang, Jinwoo
Published in Physical review. X (06.11.2019)
Published in Physical review. X (06.11.2019)
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Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors
Kalarickal, Nidhin Kurian, Feng, Zixuan, Anhar Uddin Bhuiyan, A. F. M., Xia, Zhanbo, Moore, Wyatt, McGlone, Joe F., Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping, Rajan, Siddharth
Published in IEEE transactions on electron devices (01.01.2021)
Published in IEEE transactions on electron devices (01.01.2021)
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Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications
Zhang, Yuxuan, Chen, Zhaoying, Li, Wenbo, Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping
Published in Physica status solidi. A, Applications and materials science (01.03.2021)
Published in Physica status solidi. A, Applications and materials science (01.03.2021)
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Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs
Sun, Wenyuan, Joh, Jungwoo, Krishnan, Srikanth, Pendharkar, Sameer, Jackson, Christine M., Ringel, Steven A., Arehart, Aaron R.
Published in IEEE transactions on electron devices (01.02.2019)
Published in IEEE transactions on electron devices (01.02.2019)
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Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs
Jin Chen, Puzyrev, Yevgeniy S., Rong Jiang, En Xia Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Arehart, Aaron R., Ringel, Steven A., Saunier, Paul, Lee, Cathy
Published in IEEE transactions on nuclear science (01.12.2015)
Published in IEEE transactions on nuclear science (01.12.2015)
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Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
Ghadi, Hemant, McGlone, Joe F., Jackson, Christine M., Farzana, Esmat, Feng, Zixuan, Bhuiyan, A. F. M. Anhar Uddin, Zhao, Hongping, Arehart, Aaron R., Ringel, Steven A.
Published in APL materials (01.02.2020)
Published in APL materials (01.02.2020)
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23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations
Lepkowski, Daniel L., Grassman, Tyler J., Boyer, Jacob T., Chmielewski, Daniel J., Yi, Chuqi, Juhl, Mattias K., Soeriyadi, Anastasia H., Western, Ned, Mehrvarz, Hamid, Römer, Udo, Ho-Baillie, Anita, Kerestes, Christopher, Derkacs, Daniel, Whipple, Steven G., Stavrides, Alex P., Bremner, Stephen P., Ringel, Steven A.
Published in Solar energy materials and solar cells (15.09.2021)
Published in Solar energy materials and solar cells (15.09.2021)
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Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
Farzana, Esmat, Mauze, Akhil, Varley, Joel B., Blue, Thomas E., Speck, James S., Arehart, Aaron R., Ringel, Steven A.
Published in APL materials (01.12.2019)
Published in APL materials (01.12.2019)
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Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods
Ghadi, Hemant, Cornuelle, Evan, Mcglone, Joe F., Senckowski, Alexander, Sharma, Shivam, Wong, Man Hoi, Singisetti, Uttam, Ringel, Steven A.
Published in APL materials (01.09.2024)
Published in APL materials (01.09.2024)
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In Situ and Ex Situ Investigations of KF Postdeposition Treatment Effects on CIGS Solar Cells
Karki, Shankar, Paul, Pran K., Rajan, Grace, Ashrafee, Tasnuva, Aryal, Krishna, Pradhan, Puja, Collins, Robert Warren, Rockett, Angus, Grassman, Tyler J., Ringel, Steven A., Arehart, Aaron R., Marsillac, Sylvain
Published in IEEE journal of photovoltaics (01.03.2017)
Published in IEEE journal of photovoltaics (01.03.2017)
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Investigation of Rear-Emitter GaAs0.75P0.25 Top Cells for Application to III-V/Si Tandem Photovoltaics
Lepkowski, Daniel L., Boyer, Jacob T., Chmielewski, Daniel J., Silvaggio, Amber C., Ringel, Steven A., Grassman, Tyler J.
Published in IEEE journal of photovoltaics (01.11.2019)
Published in IEEE journal of photovoltaics (01.11.2019)
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