AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs
Hagedorn, Sylvia, Knauer, Arne, Mogilatenko, Anna, Richter, Eberhard, Weyers, Markus
Published in Physica status solidi. A, Applications and materials science (01.12.2016)
Published in Physica status solidi. A, Applications and materials science (01.12.2016)
Get full text
Journal Article
Influence of AlN buffer layer on growth of AlGaN by HVPE
Fleischmann, Simon, Richter, Eberhard, Mogilatenko, Anna, Weyers, Markus, Tränkle, Günther
Published in physica status solidi (b) (01.08.2017)
Published in physica status solidi (b) (01.08.2017)
Get full text
Journal Article
Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire
Fleischmann, Simon, Mogilatenko, Anna, Hagedorn, Sylvia, Richter, Eberhard, Goran, Daniel, Schäfer, Peter, Zeimer, Ute, Weyers, Markus, Tränkle, Günther
Published in Journal of crystal growth (15.03.2015)
Published in Journal of crystal growth (15.03.2015)
Get full text
Journal Article
Boule-like growth of GaN by HVPE
Richter, Eberhard, Zeimer, Ute, Brunner, Frank, Hagedorn, Sylvia, Weyers, Markus, Tränkle, Günther
Published in Physica status solidi. C (01.01.2010)
Published in Physica status solidi. C (01.01.2010)
Get full text
Journal Article
Current Status of Carbon‐Related Defect Luminescence in GaN
Zimmermann, Friederike, Beyer, Jan, Röder, Christian, Beyer, Franziska C., Richter, Eberhard, Irmscher, Klaus, Heitmann, Johannes
Published in Physica status solidi. A, Applications and materials science (01.10.2021)
Published in Physica status solidi. A, Applications and materials science (01.10.2021)
Get full text
Journal Article
MOVPE growth of violet GaN LEDs on β-Ga2O3 substrates
Li, Ding, Hoffmann, Veit, Richter, Eberhard, Tessaro, Thomas, Galazka, Zbigniew, Weyers, Markus, Tränkle, Günther
Published in Journal of crystal growth (15.11.2017)
Published in Journal of crystal growth (15.11.2017)
Get full text
Journal Article
Growth and Properties of Intentionally Carbon‐Doped GaN Layers
Richter, Eberhard, Beyer, Franziska C., Zimmermann, Friederike, Gärtner, Günter, Irmscher, Klaus, Gamov, Ivan, Heitmann, Johannes, Weyers, Markus, Tränkle, Günther
Published in Crystal research and technology (1979) (01.02.2020)
Published in Crystal research and technology (1979) (01.02.2020)
Get full text
Journal Article
Influence of quartz on silicon incorporation in HVPE grown AlN
Fleischmann, Simon, Richter, Eberhard, Mogilatenko, Anna, Weyers, Markus, Tränkle, Günther
Published in Journal of crystal growth (01.02.2019)
Published in Journal of crystal growth (01.02.2019)
Get full text
Journal Article
AlN growth on nano-patterned sapphire: A route for cost efficient pseudo substrates for deep UV LEDs: AlN growth on nano-patterned sapphire
Hagedorn, Sylvia, Knauer, Arne, Mogilatenko, Anna, Richter, Eberhard, Weyers, Markus
Published in Physica status solidi. A, Applications and materials science (01.12.2016)
Published in Physica status solidi. A, Applications and materials science (01.12.2016)
Get full text
Journal Article
MOVPE growth of violet GaN LEDs on ß-Ga^sub 2^O^sub 3^ substrates
Li, Ding, Hoffmann, Veit, Richter, Eberhard, Tessaro, Thomas, Galazka, Zbigniew, Weyers, Markus, Tränkle, Günther
Published in Journal of crystal growth (15.11.2017)
Get full text
Published in Journal of crystal growth (15.11.2017)
Journal Article
Es posible otro mundo?
Horst Eberhard, Richter
Published in Desde el jardín de Freud : revista de psicoanálisis (01.01.2006)
Get full text
Published in Desde el jardín de Freud : revista de psicoanálisis (01.01.2006)
Journal Article
Designing sapphire surface patterns to promote AlGaN overgrowth in hydride vapor phase epitaxy
Fleischmann, Simon, Hagedorn, Sylvia, Mogilatenko, Anna, Weinrich, Jonas, Prasai, Deepak, Richter, Eberhard, Unger, Ralph-Stephan, Weyers, Markus, Tränkle, Günther
Published in Semiconductor science and technology (01.03.2020)
Published in Semiconductor science and technology (01.03.2020)
Get full text
Journal Article
Triangular‐shaped sapphire patterning for HVPE grown AlGaN layers
Fleischmann, Simon, Richter, Eberhard, Mogilatenko, Anna, Unger, Ralph‐Stephan, Prasai, Deepak, Weyers, Markus, Tränkle, Günther
Published in Physica status solidi. A, Applications and materials science (01.09.2017)
Published in Physica status solidi. A, Applications and materials science (01.09.2017)
Get full text
Journal Article
III-N III-N SINGLE CRYSTALS
BRUNNER FRANK, WEYERS MARKUS, GRUNDER MARIT, HABEL FRANK, RICHTER EBERHARD
Year of Publication 02.12.2019
Get full text
Year of Publication 02.12.2019
Patent
HVPE growth of thick Al0.45Ga0.55N layers on trench patterned sapphire substrates
Hagedorn, Sylvia, Richter, Eberhard, Zeimer, Ute, Weyers, Markus
Published in Physica status solidi. C (01.03.2013)
Published in Physica status solidi. C (01.03.2013)
Get full text
Journal Article
HVPE growth of thick Al 0.45 Ga 0.55 N layers on trench patterned sapphire substrates
Hagedorn, Sylvia, Richter, Eberhard, Zeimer, Ute, Weyers, Markus
Published in Physica status solidi. C (01.03.2013)
Published in Physica status solidi. C (01.03.2013)
Get full text
Journal Article
HVPE growth of thick Al sub(0.45)Ga sub(0.55)N layers on trench patterned sapphire substrates
Hagedorn, Sylvia, Richter, Eberhard, Zeimer, Ute, Weyers, Markus
Published in Physica status solidi. C (01.03.2013)
Published in Physica status solidi. C (01.03.2013)
Get full text
Journal Article
METHOD FOR PRODUCING III-N SINGLE CRYSTALS, AND III-N SINGLE CRYSTAL
BRUNNER FRANK, WEYERS MARKUS, GRUNDER MARIT, HABEL FRANK, RICHTER EBERHARD
Year of Publication 24.12.2014
Get full text
Year of Publication 24.12.2014
Patent
HVPE growth of AlxGa1-xN alloy layers
Hagedorn, Sylvia, Richter, Eberhard, Netzel, Carsten, Zeimer, Ute, Weyers, Markus, Tränkle, Günther
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
Get full text
Journal Article