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Year of Publication 15.08.2024
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Year of Publication 19.05.2022
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Year of Publication 19.05.2022
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Year of Publication 24.03.2022
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Year of Publication 24.03.2022
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Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
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Year of Publication 03.05.2022
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Year of Publication 03.05.2022
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ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSULATOR
Liu, Xiang, Kikkawa, Toshihide, Rhodes, David Michael, Mishra, Umesh, Wu, Mo, Gritters, John Kirk, Lal, Rakesh K, Neufeld, Carl Joseph
Year of Publication 11.02.2021
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Year of Publication 11.02.2021
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Conditions for burn-in of high power semiconductors
Rhodes, David Michael, McKay, James Leroy, Shen, Likun, Smith, Kurt Vernon, Barr, Ronald Avrom
Year of Publication 11.06.2019
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Year of Publication 11.06.2019
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CONDITIONS FOR BURN-IN OF HIGH POWER SEMICONDUCTORS
Rhodes, David Michael, McKay, James Leroy, Shen, Likun, Smith, Kurt Vernon, Barr, Ronald Avrom
Year of Publication 18.10.2018
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Year of Publication 18.10.2018
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High voltage III-N devices and structures with reduced current degradation
HWANG, ROBIN CHRISTINE, RHODES, DAVID MICHAEL, BISI, DAVIDE, SWENSON, BRIAN L, GUPTA, GEETAK, WIENECKE, STEVEN, MISHRA, UMESH
Year of Publication 16.05.2024
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Year of Publication 16.05.2024
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III-nitride device with through-via structure
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Year of Publication 05.05.2023
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Year of Publication 05.05.2023
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ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL(1-X)SIXO GATE INSULATOR
LAL, Rakesh, K, NEUFELD, Carl Joseph, GRITTERS, John, Kirk, MISHRA, Umesh, KIKKAWA, Toshihide, RHODES, David, Michael, LIU, Xiang, WU, Mo
Year of Publication 20.07.2017
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Year of Publication 20.07.2017
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