Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films
Wang, Xuepei, Wen, Yichen, Wu, Maokun, Cui, Boyao, Wu, Yi-Shan, Li, Yuchun, Li, Xiaoxi, Ye, Sheng, Ren, Pengpeng, Ji, Zhi-Gang, Lu, Hong-Liang, Wang, Runsheng, Zhang, David Wei, Huang, Ru
Published in ACS applied materials & interfaces (29.03.2023)
Published in ACS applied materials & interfaces (29.03.2023)
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Journal Article
DRGA-Based Second-Order Block Arnoldi Method for Model Order Reduction of MIMO RCS Circuits
Chen, Hai-Bao, Zhang, Xinjie, Zhu, Wenjie, Chen, Jie, Ren, Pengpeng, Ji, Zhigang, Liu, Junhua, Wang, Runsheng, Huang, Ru
Published in IEEE transactions on circuits and systems. I, Regular papers (01.05.2024)
Published in IEEE transactions on circuits and systems. I, Regular papers (01.05.2024)
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Journal Article
On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology
Wang, Da, Zhou, Longda, Xue, Yongkang, Ren, Pengpeng, Sun, Zixuan, Wang, Zirui, Wang, Jianping, Wu, Blacksmith, Ji, Zhigang, Wang, Runsheng, Huang, Ru
Published in IEEE electron device letters (01.06.2023)
Published in IEEE electron device letters (01.06.2023)
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Journal Article
A Probability-Based Strong Physical Unclonable Function With Strong Machine Learning Immunity
Tu, Zezhong, Xue, Yongkang, Ren, Pengpeng, Hao, Feng, Wang, Runsheng, Li, Meng, Zhang, Jianfu, Ji, Zhigang, Huang, Ru
Published in IEEE electron device letters (01.01.2022)
Published in IEEE electron device letters (01.01.2022)
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Journal Article
Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor With High Endurance and Remnant Polarization
Cui, Boyao, Wang, Xuepei, Li, Yuchun, Wu, Maokun, Wu, Yishan, Liu, Jinhao, Li, Xiaoxi, Ren, Pengpeng, Ye, Sheng, Ji, Zhigang, Lu, Hongliang, Wang, Runsheng, Zhang, David Wei, Huang, Ru
Published in IEEE electron device letters (01.06.2023)
Published in IEEE electron device letters (01.06.2023)
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Journal Article
Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition
Wang, Da, Zhou, Longda, Xue, Yongkang, Ren, Pengpeng, Zhang, Lining, Li, Xiong, Liu, Xiangli, Wang, Jianping, Wu, Blacksmith, Ji, Zhigang, Wang, Runsheng, Cao, Kanyu, Huang, Ru
Published in IEEE transactions on electron devices (01.12.2022)
Published in IEEE transactions on electron devices (01.12.2022)
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Journal Article
Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part II: PBTI Aging and Optimization
Liu, Yong, Wang, Da, Ren, Pengpeng, Li, Jie, Qiao, Zheng, Wu, Maokun, Wen, Yichen, Zhou, Longda, Sun, Zixuan, Wang, Zirui, Han, Qinghua, Wu, Blacksmith, Cao, Kanyu, Wang, Runsheng, Ji, Zhigang, Huang, Ru
Published in IEEE transactions on electron devices (01.08.2024)
Published in IEEE transactions on electron devices (01.08.2024)
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Journal Article
Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) Under Sub-20-nm DRAM Node-Part I: Defect-Based Statistical Compact Model
Liu, Yong, Wang, Da, Ren, Pengpeng, Li, Jie, Qiao, Zheng, Wu, Maokun, Wen, Yichen, Zhou, Longda, Sun, Zixuan, Wang, Zirui, Han, Qinghua, Wu, Blacksmith, Cao, Kanyu, Wang, Runsheng, Ji, Zhigang, Huang, Ru
Published in IEEE transactions on electron devices (01.08.2024)
Published in IEEE transactions on electron devices (01.08.2024)
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Journal Article
Toward Reliability- and Variability-Aware Design-Technology Co-Optimization in Advanced Nodes: Defect Characterization, Industry-Friendly Modeling, and ML-Assisted Prediction
Ji, Zhigang, Xue, Yongkang, Ren, Pengpeng, Ye, Jinfeng, Li, Yu, Wu, Yishan, Wang, Da, Wang, Shuying, Wu, Junjie, Wang, Zirui, Wen, Yichen, Xia, Shiyu, Zhang, Lining, Zhang, Jianfu, Liu, Junhua, Luo, Junwei, Deng, Huixiong, Wang, Runsheng, Yang, Lianfeng, Huang, Ru
Published in IEEE transactions on electron devices (01.01.2024)
Published in IEEE transactions on electron devices (01.01.2024)
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Journal Article
On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects
Xue, Yongkang, Ren, Pengpeng, Wu, Junjie, Liu, Zhuyou, Wang, Shuying, Li, Yu, Wang, Zirui, Sun, Zixuan, Wang, Da, Wen, Yichen, Xia, Shiyu, Zhang, Lining, Zhang, Jianfu, Ji, Zhigang, Luo, Junwei, Deng, Huixiong, Wang, Runsheng, Yang, Lianfeng, Huang, Ru
Published in IEEE transactions on electron devices (01.09.2023)
Published in IEEE transactions on electron devices (01.09.2023)
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Journal Article
Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor
Wang, Xuepei, Cui, BoYao, Jing, Lingling, Wang, Xiaolin, Wu, Maokun, Wen, Yicheng, Wu, Yishan, Liu, Jinhao, Zhang, Feilong, Lin, Zidong, Sun, Yanan, Ren, Pengpeng, Ye, Sheng, Wang, Runsheng, Ji, Zhigang, Huang, Ru
Published in IEEE transactions on electron devices (01.04.2024)
Published in IEEE transactions on electron devices (01.04.2024)
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Journal Article
Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM
Wu, Yishan, Cai, Puyang, Liu, Zhiwei, Ren, Pengpeng, Ji, Zhigang
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Oxygen Vacancy Modulation With TiO₂ Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O₂ Thin Films
Wang, Xuepei, Wu, Maokun, Cui, Boyao, Li, Yuchun, Wu, Yishan, Wen, Yichen, Liu, Jinhao, Li, Xiaoxi, Ye, Sheng, Ren, Pengpeng, Ji, Zhigang, Lu, Hongliang, Zhang, David Wei, Wang, Runsheng, Huang, Ru
Published in IEEE electron device letters (01.01.2024)
Published in IEEE electron device letters (01.01.2024)
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Journal Article
Oxygen Vacancy Modulation With TiO₂ Stack Interface Engineering for Ferroelectric Hf 0.5 Zr 0.5 O₂ Thin Films
Wang, Xuepei, Wu, Maokun, Cui, Boyao, Li, Yuchun, Wu, Yishan, Wen, Yichen, Liu, Jinhao, Li, Xiaoxi, Ye, Sheng, Ren, Pengpeng, Ji, Zhigang, Lu, Hongliang, Zhang, David Wei, Wang, Runsheng, Huang, Ru
Published in IEEE electron device letters (01.01.2024)
Published in IEEE electron device letters (01.01.2024)
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Journal Article
Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator
Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Chen, Alvin, Jushan Xie, Ru Huang
Published in 2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD) (01.11.2017)
Published in 2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD) (01.11.2017)
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Conference Proceeding
Back-End-of-Line Compatible HfO 2 /ZrO 2 Superlattice Ferroelectric Capacitor With High Endurance and Remnant Polarization
Cui, Boyao, Wang, Xuepei, Li, Yuchun, Wu, Maokun, Wu, Yishan, Liu, Jinhao, Li, Xiaoxi, Ren, Pengpeng, Ye, Sheng, Ji, Zhigang, Lu, Hongliang, Wang, Runsheng, Zhang, David Wei, Huang, Ru
Published in IEEE electron device letters (01.06.2023)
Published in IEEE electron device letters (01.06.2023)
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Journal Article
Realization of multiphoton lasing from carbon nanodot microcavities
Zhang, Wenfei, Ni, Yiqun, Xu, Xuhui, Lu, Wei, Ren, Pengpeng, Yan, Peiguang, Siu, Chun Kit, Ruan, Shuangchen, Yu, Siu Fung
Published in Nanoscale (14.05.2017)
Published in Nanoscale (14.05.2017)
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Journal Article
Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM
Zhou, Longda, Li, Jie, Ren, Pengpeng, Ye, Sheng, Wang, Da, Qiao, Zheng, Ji, Zhigang
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding