Annealing of reactive ion etching plasma-exposed thin oxides
TIEER GU, AWADELKARIM, O. O, FONASH, S. J, REMBETSKI, J. F, CHAN, Y. D
Published in Journal of the Electrochemical Society (01.02.1995)
Published in Journal of the Electrochemical Society (01.02.1995)
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Journal Article
Electrical characterization of the Si substrate in magnetically enhanced or conventional reactive-ion-etch-exposed SiO2/p-Si structures
AWADELKARIM, O. O, GU, T, DITIZIO, R. A, MIKULAN, P. I, FONASH, S. J, REMBETSKI, J. F, CHAN, Y. D
Published in IEEE electron device letters (01.04.1993)
Published in IEEE electron device letters (01.04.1993)
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Journal Article
Impact of polysilicon dry etching on 0.5 μm NMOS transistor performance: the presence of both plasma bombardment damage and plasma charging damage
Gu, T., Okandan, M., Awadelkarim, O.O., Fonash, S.J., Rembetski, J.F., Aum, P., Chan, Y.D.
Published in IEEE electron device letters (01.02.1994)
Published in IEEE electron device letters (01.02.1994)
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Journal Article
A comparison of Cl2 and HBr/Cl2-based polysilicon etch chemistries : impact on SiO2 and Si substrate damage
REMBETSKI, J. F, CHAN, Y. D, BODEN, E, TIEER GU, AWADELKARIM, O. O, DITIZIO, R. A, FONASH, S. J, XIAOYU LI, VISWANATHAN, C. R
Published in Japanese journal of applied physics (01.06.1993)
Published in Japanese journal of applied physics (01.06.1993)
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Conference Proceeding
Impact of polysilicon dry etching on 0.5 mu m NMOS transistorperformance: the presence of both plasma bombardment damage and plasmacharging damage
Gu, T, Okandan, M, Awadelkarim, O O, Fonash, S J, Rembetski, J F, Aum, P, Chan, Y D
Published in IEEE electron device letters (01.02.1994)
Published in IEEE electron device letters (01.02.1994)
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Journal Article
Electrical characterization of the Si substrate in magneticallyenhanced or conventional reactive-ion-etch-exposed SiO(2)/p-Sistructures
Awadelkarim, O O, Gu, T, Ditizio, R A, Mikulan, P I, Fonash, S J, Rembetski, J F, Chan, Y D
Published in IEEE electron device letters (01.04.1993)
Published in IEEE electron device letters (01.04.1993)
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Journal Article
Electrical characterization of the Si substrate in magnetically enhanced or conventional reactive-ion-etch-exposed SiO sub(2)/p-Si structures
Awadelkarim, O O, Gu, T, Ditizio, R A, Jilulan, P I, Fonash, S J, Rembetski, J F, Chan, Y D
Published in IEEE electron device letters (01.01.1993)
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Published in IEEE electron device letters (01.01.1993)
Journal Article