The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps
Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Luque, María Toledano, Nelhiebel, M.
Published in IEEE transactions on electron devices (01.11.2011)
Published in IEEE transactions on electron devices (01.11.2011)
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Journal Article
The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
Feil, Maximilian W., Huerner, Andreas, Puschkarsky, Katja, Schleich, Christian, Aichinger, Thomas, Gustin, Wolfgang, Reisinger, Hans, Grasser, Tibor
Published in Crystals (Basel) (01.12.2020)
Published in Crystals (Basel) (01.12.2020)
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Journal Article
'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions
Bukhori, Muhammad Faiz, Grasser, Tibor, Kaczer, Ben, Reisinger, Hans, Asenov, Asen
Published in 2010 IEEE International Integrated Reliability Workshop Final Report (01.10.2010)
Published in 2010 IEEE International Integrated Reliability Workshop Final Report (01.10.2010)
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Conference Proceeding
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full Bias Space: Implications and Peculiarities
Jech, Markus, Rott, Gunnar, Reisinger, Hans, Tyaginov, Stanislav, Rzepa, Gerhard, Grill, Alexander, Jabs, Dominic, Jungemann, Christoph, Waltl, Michael, Grasser, Tibor
Published in IEEE transactions on electron devices (01.08.2020)
Published in IEEE transactions on electron devices (01.08.2020)
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Journal Article
NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark
Grasser, Tibor, Rott, Karina, Reisinger, Hans, Waltl, Michael, Schanovsky, Franz, Kaczer, Ben
Published in IEEE transactions on electron devices (01.11.2014)
Published in IEEE transactions on electron devices (01.11.2014)
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Journal Article
Gate Switching Instability in Silicon Carbide MOSFETs-Part II: Modeling
Grasser, Tibor, Feil, Maximilian W., Waschneck, Katja, Reisinger, Hans, Berens, Judith, Waldhoer, Dominic, Vasilev, Aleksandr, Waltl, Michael, Aichinger, Thomas, Bockstedte, Michel, Gustin, Wolfgang, Pobegen, Gregor
Published in IEEE transactions on electron devices (01.07.2024)
Published in IEEE transactions on electron devices (01.07.2024)
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Journal Article
Investigation of threshold voltage stability of SiC MOSFETs
Peters, Dethard, Aichinger, Thomas, Basler, Thomas, Rescher, Gerald, Puschkarsky, Katja, Reisinger, Hans
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental
Ullmann, Bianka, Jech, Markus, Puschkarsky, Katja, Rott, Gunnar Andreas, Waltl, Michael, Illarionov, Yury, Reisinger, Hans, Grasser, Tibor
Published in IEEE transactions on electron devices (01.01.2019)
Published in IEEE transactions on electron devices (01.01.2019)
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Journal Article
Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models
Waschneck, Katja, Schleich, Christian, Waltl, Michael, Hernandez, Yoanlys, Reisinger, Hans, Grasser, Tibor, Stampfer, Bernhard
Published in Materials science forum (31.05.2022)
Published in Materials science forum (31.05.2022)
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Journal Article
Gate Switching Instability in Silicon Carbide MOSFETs-Part I: Experimental
Feil, Maximilian W., Waschneck, Katja, Reisinger, Hans, Berens, Judith, Aichinger, Thomas, Prigann, Sven, Pobegen, Gregor, Salmen, Paul, Rescher, Gerald, Waldhoer, Dominic, Vasilev, Aleksandr, Gustin, Wolfgang, Waltl, Michael, Grasser, Tibor
Published in IEEE transactions on electron devices (01.07.2024)
Published in IEEE transactions on electron devices (01.07.2024)
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Journal Article
On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs
Waschneck, Katja, Salmen, Paul, Feil, Maximilian Wolfgang, Gustin, Wolfgang, Reisinger, Hans, Rescher, Gerald, Grasser, Tibor, Aichinger, Thomas
Published in Materials science forum (06.06.2023)
Published in Materials science forum (06.06.2023)
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Journal Article
Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation
Puschkarsky, Katja, Reisinger, Hans, Aichinger, Thomas, Gustin, Wolfgang, Grasser, Tibor
Published in 2017 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2017)
Published in 2017 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2017)
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Conference Proceeding
SEMICONDUCTOR DEVICE HAVING OPTICAL DEVICE DEGRADATION SENSOR
REISINGER HANS, MAXIMILIAN WOLFGANG FEIL, THOMAS AICHINGER, ANDRE KABAKOW
Year of Publication 27.04.2023
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Year of Publication 27.04.2023
Patent
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs
Puschkarsky, Katja, Grasser, Tibor, Aichinger, Thomas, Gustin, Wolfgang, Reisinger, Hans
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01.03.2018)
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01.03.2018)
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Conference Proceeding
On the Role of NBTI and PBTI Induced Mobility Degradation for Compact Modeling in Metal-Gate/High-k FETs
Bogner, Christian, Reisinger, Hans, Lahbib, Insaf, Martin, Andreas, Gustin, Wolfgang, Grasser, Tibor, Schlunder, Christian
Published in 2023 IEEE International Integrated Reliability Workshop (IIRW) (08.10.2023)
Published in 2023 IEEE International Integrated Reliability Workshop (IIRW) (08.10.2023)
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Conference Proceeding
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability
Bogner, Christian, Schlunder, Christian, Waltl, Michael, Reisinger, Hans, Grasser, Tibor
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding