Search Results - "REGISTER, Leonard F" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

by Rai, Amritesh, Valsaraj, Amithraj, Movva, Hema C.P, Roy, Anupam, Ghosh, Rudresh, Sonde, Sushant, Kang, Sangwoo, Chang, Jiwon, Trivedi, Tanuj, Dey, Rik, Guchhait, Samaresh, Larentis, Stefano, Register, Leonard F, Tutuc, Emanuel, Banerjee, Sanjay K
Published in Nano letters (08.07.2015)

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Journal Article

The microscopic origin of DMI in magnetic bilayers and prediction of giant DMI in new bilayers

The microscopic origin of DMI in magnetic bilayers and prediction of giant DMI in new bilayers

by Jadaun, Priyamvada, Register, Leonard F., Banerjee, Sanjay K.
Published in npj computational materials (03.07.2020)

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Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors

by Kang, Sangwoo, Prasad, Nitin, Movva, Hema C. P, Rai, Amritesh, Kim, Kyounghwan, Mou, Xuehao, Taniguchi, Takashi, Watanabe, Kenji, Register, Leonard F, Tutuc, Emanuel, Banerjee, Sanjay K
Published in Nano letters (10.08.2016)

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Journal Article

Emerging 2D materials for tunneling field effect transistors

Emerging 2D materials for tunneling field effect transistors

by Nupur Navlakha, Leonard F. Register, Sanjay K. Banerjee
Published in Tecnología en marcha (01.06.2023)

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Journal Article

Rational design principles for giant spin Hall effect in 5d-transition metal oxides

Rational design principles for giant spin Hall effect in 5d-transition metal oxides

by Jadaun, Priyamvada, Register, Leonard F., Banerjee, Sanjay K.
Published in Proceedings of the National Academy of Sciences - PNAS (02.06.2020)

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Journal Article

2-D Analytical Modeling of the Magnetic Tunnel Junctions Including Multidomain Effects: Predictive Insights and Design Optimization

2-D Analytical Modeling of the Magnetic Tunnel Junctions Including Multidomain Effects: Predictive Insights and Design Optimization

by Pandey, Nilesh, Chauhan, Yogesh Singh, Register, Leonard F., Banerjee, Sanjay K.
Published in IEEE transactions on electron devices (01.07.2024)

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Journal Article

Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain, and Layer Engineering

Band Alignment in Black Phosphorus/Transition Metal Dichalcogenide Heterolayers: Impact of Charge Redistribution, Electric Field, Strain, and Layer Engineering

by Navlakha, Nupur, Jadaun, Priyamvada, Register, Leonard F., Banerjee, Sanjay K.
Published in Journal of electronic materials (01.02.2023)

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Journal Article

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

by Fallahazad, Babak, Lee, Kayoung, Kang, Sangwoo, Xue, Jiamin, Larentis, Stefano, Corbet, Christopher, Kim, Kyounghwan, Movva, Hema C. P, Taniguchi, Takashi, Watanabe, Kenji, Register, Leonard F, Banerjee, Sanjay K, Tutuc, Emanuel
Published in Nano letters (14.01.2015)

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Journal Article

Graphene field-effect transistors

Graphene field-effect transistors

by REDDY, Dharmendar, REGISTER, Leonard F, CARPENTER, Gary D, BANERJEE, Sanjay K
Published in Journal of physics. D, Applied physics (10.08.2011)

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Journal Article

Dynamics of Domains and Its Impact on Gate Tunneling in CMOS-Compatible FeFETs

Dynamics of Domains and Its Impact on Gate Tunneling in CMOS-Compatible FeFETs

by Pandey, Nilesh, Singh Chauhan, Yogesh, Register, Leonard F., Banerjee, Sanjay K.
Published in IEEE electron device letters (01.07.2024)

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Journal Article

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures

by Burg, G. William, Prasad, Nitin, Fallahazad, Babak, Valsaraj, Amithraj, Kim, Kyounghwan, Taniguchi, Takashi, Watanabe, Kenji, Wang, Qingxiao, Kim, Moon J, Register, Leonard F, Tutuc, Emanuel
Published in Nano letters (14.06.2017)

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Journal Article

Write Error Rate of Spin-Transfer-Torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement

Write Error Rate of Spin-Transfer-Torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement

by Roy, Urmimala, Pramanik, Tanmoy, Register, Leonard F., Banerjee, Sanjay K.
Published in IEEE transactions on magnetics (01.10.2016)

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Journal Article

Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide

Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide

by Chen, Ke, Roy, Anupam, Rai, Amritesh, Valsaraj, Amithraj, Meng, Xianghai, He, Feng, Xu, Xiaochuan, Register, Leonard F, Banerjee, Sanjay, Wang, Yaguo
Published in ACS applied materials & interfaces (10.01.2018)

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Journal Article

Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations

Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations

by Pramanik, Tanmoy, Roy, Urmimala, Jadaun, Priyamvada, Register, Leonard F., Banerjee, Sanjay K.
Published in Journal of magnetism and magnetic materials (01.12.2018)

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Journal Article

Method to enhance resonant interlayer tunneling in bilayer-graphene systems

Method to enhance resonant interlayer tunneling in bilayer-graphene systems

by Prasad, Nitin, Wu, Xian, Banerjee, Sanjay K., Register, Leonard F.
Published in Journal of computational electronics (01.10.2021)

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Journal Article

Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device

by Banerjee, S.K., Register, L.F., Tutuc, E., Reddy, D., MacDonald, A.H.
Published in IEEE electron device letters (01.02.2009)

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Journal Article

Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET

by Sangwoo Kang, Fallahazad, Babak, Kayoung Lee, Movva, Hema, Kyounghwan Kim, Corbet, Chris M., Taniguchi, Takashi, Watanabe, Kenji, Colombo, Luigi, Register, Leonard F., Tutuc, Emanuel, Banerjee, Sanjay K.
Published in IEEE electron device letters (01.04.2015)

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Journal Article

Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide

Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide

by Valsaraj, Amithraj, Chang, Jiwon, Rai, Amritesh, Register, Leonard F, Banerjee, Sanjay K
Published in 2d materials (23.11.2015)

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Journal Article

From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits

From Coherent States in Adjacent Graphene Layers toward Low-Power Logic Circuits

by Register, Leonard F., Reddy, Dharmendar, Basu, Dipanjan
Published in Advances in Condensed Matter Physics (01.01.2011)

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Journal Article

Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications

Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications

by Kang, Sangwoo, Mou, Xuehao, Fallahazad, Babak, Prasad, Nitin, Wu, Xian, Valsaraj, Amithraj, Movva, Hema C P, Kim, Kyounghwan, Tutuc, Emanuel, Register, Leonard F, Banerjee, Sanjay K
Published in Journal of physics. D, Applied physics (27.09.2017)

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