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"RAMDANI JAMAL"
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"RAMDANI JAMAL"
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GROWTH OF MULTI-LAYER GROUP III-NITRIDE BUFFERS ON LARGE-AREA SILICON SUBSTRATES AND OTHER SUBSTRATES
by
RAMDANI JAMAL
,
BAHL SANDEEP R
Year of Publication
13.02.2014
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HIGH-QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON
by
RAMDANI JAMAL
,
EDWARDS JOHN P
,
LIU LINLIN
Year of Publication
17.12.2015
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Growth of multi-layer group III-nitride buffers on large-area silicon substrates and other substrates
by
RAMDANI JAMAL
,
BAHL SANDEEP R
Year of Publication
26.11.2013
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PROTECTIVE INSULATOR FOR HFET DEVICES
by
Kudymov, Alexey
,
Wang, Xiaohui
,
Ramdani
,
Jamal
,
Liu, Linlin
Year of Publication
18.10.2017
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PROTECTIVE INSULATOR FOR HFET DEVICES
by
Wang Xiaohui
,
Ramdani Jamal
,
Liu Linlin
,
Kudymov Alexey
Year of Publication
12.10.2017
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High quality GaN high-voltage HFETs on silicon
by
RAMDANI JAMAL
,
EDWARDS JOHN P
,
LIU LINLIN
Year of Publication
29.09.2015
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Protective insulator for HFET devices
by
Wang Xiaohui
,
Ramdani Jamal
,
Liu Linlin
,
Kudymov Alexey
Year of Publication
01.08.2017
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High-voltage field effect transistor and manufacturing method thereof
by
RAMDANI
,
JAMAL
,
LIU LEI
,
WANG XIAOHUI
,
ALEXEY KUDYMOV
Year of Publication
15.07.2022
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HETEROSTRUCTURE POWER TRANSISTOR WITH ALSIN PASSIVATION LAYER
by
MICHAEL MURPHY
,
JOHN PAUL EDWARDS
,
JAMAL RAMDANI
Year of Publication
12.06.2015
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Method for manufacturing lateral Schottky diode and diode
by
ALEXEY KUDYMOV
,
JAMAL RAMDANI
Year of Publication
22.02.2017
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System and method for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture
by
Ramdani
,
Jamal
,
Xu, Mingwei
Year of Publication
07.12.2010
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System and method for providing a polyemit module for a self aligned heterojunction bipolar transistor architecture
by
Xu, Mingwei
,
Ramdani
,
Jamal
Year of Publication
23.11.2010
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Heterostructure Power Transistor with AlSiN Passivation Layer
by
MURPHY MICHAEL
,
EDWARDS JOHN PAUL
,
RAMDANI JAMAL
Year of Publication
19.03.2015
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Composite wafer for fabrication of semiconductor devices
by
SWAMINATHAN KIERTHI
,
KOUDYMOV ALEXEI
,
RAMDANI JAMAL
Year of Publication
27.01.2015
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Heterostructure power transistor with AlSiN passivation layer
by
MURPHY MICHAEL
,
EDWARDS JOHN PAUL
,
RAMDANI JAMAL
Year of Publication
06.01.2015
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High electron-mobility transistor and semiconductor device
by
RAMDANI
,
JAMAL
,
LIU, LINLIN
,
KUDYMOV, ALEXEY
Year of Publication
21.04.2020
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HIGH QUALITY GAN HIGH-VOLTAGE HFETS ON SILICON
by
RAMDANI JAMAL
,
EDWARDS JOHN P
,
LIU LINLIN
Year of Publication
25.12.2014
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Low leakage gan mosfet
by
RAMDANI JAMAL
Year of Publication
19.12.2012
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139
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Normally-off gallium nitride-based semiconductor devices
by
RAMDANI JAMAL
Year of Publication
05.12.2012
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HETEROSTRUCTURE POWER TRANSISTOR AND HETEROSTRUCTURE SEMICONDUCTOR DEVICE MANUFACTURING METHOD
by
MICHAEL MURPHY
,
RAMDANI JAMAL
,
JOHN PAUL EDWARDS
Year of Publication
18.09.2014
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