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Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

by Martin, Dominik, Yurchuk, Ekaterina, Müller, Stefan, Müller, Johannes, Paul, Jan, Sundquist, Jonas, Slesazeck, Stefan, Schlösser, Till, van Bentum, Ralf, Trentzsch, Martin, Schröder, Uwe, Mikolajick, Thomas
Published in Solid-state electronics (01.10.2013)

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Journal Article

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

by Yurchuk, Ekaterina, Muller, Johannes, Muller, Stefan, Paul, Jan, Pesic, Milan, van Bentum, Ralf, Schroeder, Uwe, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.09.2016)

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Journal Article

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

by Mulaosmanovic, Halid, Ocker, Johannes, Müller, Stefan, Schroeder, Uwe, Müller, Johannes, Polakowski, Patrick, Flachowsky, Stefan, van Bentum, Ralf, Mikolajick, Thomas, Slesazeck, Stefan
Published in ACS applied materials & interfaces (01.02.2017)

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Journal Article

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

by Yurchuk, Ekaterina, Muller, Johannes, Paul, Jan, Schlosser, Till, Martin, Dominik, Hoffmann, Raik, Mueller, Stefan, Slesazeck, Stefan, Schroeder, Uwe, Boschke, Roman, van Bentum, Ralf, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.11.2014)

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Journal Article

Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

by Müller, Stefan, Polakowski, Patrick, Schenk, Tony, van Bentum, Ralf, Yurchuk, Ekaterina, Müller, Johannes, Slesazeck, Stefan, Mikolajick, Thomas, Schroeder, Uwe, Flachowsky, Stefan, Kolodinski, Sabine
Published in Advances in Science and Technology (31.10.2014)

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Journal Article

Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

by Yurchuk, Ekaterina, Mueller, Stefan, Martin, Dominik, Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas, Muller, Johannes, Paul, Jan, Hoffmann, Raik, Sundqvist, Jonas, Schlosser, Till, Boschke, Roman, van Bentum, Ralf, Trentzsch, Martin
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)

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Conference Proceeding

Charge-Trapping Phenomena in HfO 2 -Based FeFET-Type Nonvolatile Memories

Charge-Trapping Phenomena in HfO 2 -Based FeFET-Type Nonvolatile Memories

by Yurchuk, Ekaterina, Muller, Johannes, Muller, Stefan, Paul, Jan, Pesic, Milan, van Bentum, Ralf, Schroeder, Uwe, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.09.2016)

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Journal Article

Charge-Trapping Phenomena in HfO sub(2)-Based FeFET-Type Nonvolatile Memories

Charge-Trapping Phenomena in HfO sub(2)-Based FeFET-Type Nonvolatile Memories

by Yurchuk, Ekaterina, Muller, Johannes, Muller, Stefan, Paul, Jan, Pesic, Milan, van Bentum, Ralf, Schroeder, Uwe, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.09.2016)

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Journal Article

Impact of Scaling on the Performance of HfO sub(2)-Based Ferroelectric Field Effect Transistors

Impact of Scaling on the Performance of HfO sub(2)-Based Ferroelectric Field Effect Transistors

by Yurchuk, Ekaterina, Muller, Johannes, Paul, Jan, Schlosser, Till, Martin, Dominik, Hoffmann, Raik, Mueller, Stefan, Slesazeck, Stefan, Schroeder, Uwe, Boschke, Roman, van Bentum, Ralf, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.11.2014)

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Journal Article

Impact of Scaling on the Performance of HfO 2 -Based Ferroelectric Field Effect Transistors

Impact of Scaling on the Performance of HfO 2 -Based Ferroelectric Field Effect Transistors

by Yurchuk, Ekaterina, Muller, Johannes, Paul, Jan, Schlosser, Till, Martin, Dominik, Hoffmann, Raik, Mueller, Stefan, Slesazeck, Stefan, Schroeder, Uwe, Boschke, Roman, van Bentum, Ralf, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.11.2014)

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Journal Article

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2: Selected extended papers from ULIS 2012 conference

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2: Selected extended papers from ULIS 2012 conference

by MARTIN, Dominik, YURCHUK, Ekaterina, SCHRÖDER, Uwe, MIKOLAJICK, Thomas, MÜLLER, Stefan, MÜLLER, Johannes, PAUL, Jan, SUNDQUIST, Jonas, SLESAZECK, Stefan, SCHLÖSSER, Till, VAN BENTUM, Ralf, TRENTZSCH, Martin
Published in Solid-state electronics (2013)

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Journal Article

SRAM BIT CELLS

SRAM BIT CELLS

by van BENTUM, Ralf, FLECK, Karsten
Year of Publication 29.06.2023

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Patent

SRAM read current variability and its dependence on transistor statistics

SRAM read current variability and its dependence on transistor statistics

by Venugopalan, Sriramkumar, Joshi, Vivek, Zamudio, Luis, Goldbach, Matthias, Burbach, Gert, Van Bentum, Ralf, Balasubramanian, Sriram
Published in Proceedings of the IEEE 2013 Custom Integrated Circuits Conference (01.09.2013)

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Conference Proceeding

(Invited) Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

(Invited) Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

by Schroeder, Uwe, Martin, Dominik, Mueller, Johannes, Yurchuk, Ekatarina, Mueller, Stefan, Adelmann, Christoph, Schloesser, Till, van Bentum, Ralf, Mikolajick, Thomas
Published in ECS transactions (15.03.2013)

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Journal Article

Verfahren zur Herstellung einer Halbleiterstruktur, die ein ferroelektrisches Material enthält und Halbleiterstruktur, die einen ferroelektrischen Transistor umfasst

Verfahren zur Herstellung einer Halbleiterstruktur, die ein ferroelektrisches Material enthält und Halbleiterstruktur, die einen ferroelektrischen Transistor umfasst

by Grasshoff, Gunter, Van Bentum, Ralf
Year of Publication 04.06.2020

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Patent

SEMICONDUCTOR STRUCTURE INCLUDING A SPLIT GATE NONVOLATILE MEMORY CELL AND A HIGH VOLTAGE TRANSISTOR, AND METHOD FOR THE FORMATION THEREOF

SEMICONDUCTOR STRUCTURE INCLUDING A SPLIT GATE NONVOLATILE MEMORY CELL AND A HIGH VOLTAGE TRANSISTOR, AND METHOD FOR THE FORMATION THEREOF

by van Bentum Ralf, Lusetsky Igor
Year of Publication 25.08.2016

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Patent

Method of forming a semiconductor structure including a ferroelectric material and semiconductor structure including a ferroelectric transistor

Method of forming a semiconductor structure including a ferroelectric material and semiconductor structure including a ferroelectric transistor

by Grasshoff Gunter, van Bentum Ralf
Year of Publication 09.08.2016

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Patent

Semiconductor structure including a split gate nonvolatile memory cell and a high voltage transistor, and method for the formation thereof

Semiconductor structure including a split gate nonvolatile memory cell and a high voltage transistor, and method for the formation thereof

by LUSETSKY IGOR, VAN BENTUM RALF
Year of Publication 14.06.2016

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Patent

FinFET SRAM layout and method of making the same

FinFET SRAM layout and method of making the same

by Chan, Nigel, Chang, Ming-Cheng, Bentum, Ralf Van
Year of Publication 10.12.2019

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Patent

Integrated circuits with SRAM cells having additional read stacks

Integrated circuits with SRAM cells having additional read stacks

by KLICK TORSTEN, BENTUM RALF VAN
Year of Publication 22.03.2016

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Patent

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