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"RALF VAN BENTUM"
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Technique for forming transistors having raised drain and source regions with different heights
by
KAMMLER THORSTEN
,
VAN BENTUM RALF
,
LUNING SCOTT
Year of Publication
05.05.2005
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Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions
by
YU BIN
,
VAN BENTUM RALF
Year of Publication
07.09.2004
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Method for production of integrated circuits, involves building dielectric coating over substrate, which has gate electrode formed over active area and is separated by gate isolation layer
by
HEMPEL, KLAUS
,
PRUEFER, EKKEHARD
,
KRUEGEL, STEPHAN
,
BENTUM
,
RALF VAN
Year of Publication
03.01.2008
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DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR WITH REDUCED BORON DIFFUSION
by
KRUEGEL STEPHAN
,
PRUEFER EKKEHARD
,
HEMPEL KLAUS
,
VAN BENTUM RALF
Year of Publication
03.01.2008
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SOI MOSFET with asymmetrical source/body and drain/body junctions
by
YU BIN
,
VAN BENTUM RALF
Year of Publication
10.08.2004
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TRENCH ISOLATION STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH A DIFFERENT DEGREE OF CORNER ROUNDING AND A METHOD OF MANUFACTURING THE SAME
by
RALF VAN BENTUM
,
STEPHAN KRUEGEL
,
GERT BURBACH
Year of Publication
29.07.2004
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TRENCH ISOLATION STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH A DIFFERENT DEGREE OF CORNER ROUNDING AND A METHOD OF MANUFACTURING THE SAME
by
VAN BENTUM
,
RALF
,
KRUEGEL, STEPHAN
,
BURBACH, GERT
Year of Publication
22.07.2004
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Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same
by
van Bentum
,
Ralf
,
Kruegel, Stephan
,
Burbach, Gert
Year of Publication
24.06.2004
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Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same
by
KRUEGEL STEPHAN
,
BURBACH GERT
,
VAN BENTUM RALF
Year of Publication
24.06.2004
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Method of providing a thick thermal oxide in trench isolation
by
Wieczorek, Karsten
,
Kruegel, Stephan
,
van Bentum
,
Ralf
Year of Publication
26.02.2004
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Method of providing a thick thermal oxide in trench isolation
by
KRUEGEL STEPHAN
,
WIECZOREK KARSTEN
,
VAN BENTUM RALF
Year of Publication
26.02.2004
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Production of a trench isolation in a semiconductor component comprises forming a trench in the substrate, depositing a semiconductor layer in the trench, converting partially into an oxide and filling with an insulating material
by
KRUEGEL, STEPHAN
,
WIECZOREK, KARSTEN
,
BENTUM
,
RALF VAN
Year of Publication
12.02.2004
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Technique for forming transistors having raised dr
by
LUNING, SCOTT
,
BENTUM
,
RALF VAN
,
KAMMLER, THORSTEN
Year of Publication
01.03.2012
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94
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Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufacture
by
YU BIN
,
VAN BENTUM RALF
Year of Publication
17.12.2002
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95
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SOI MOSFET with graded source/drain silicide
by
YU BIN
,
VAN BENTUM RALF
Year of Publication
15.10.2002
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Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same
by
KRUEGEL, STEPHAN
,
BENTUM
,
RALF VAN
,
BURBACH, GERT
Year of Publication
11.01.2011
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97
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Verfahren zur Herstellung eines Transistors mit erhöhten und/oder verspannten Drain- und Sourcegebieten und Transistor
by
VAN BENTUM
,
RALF
,
LUNING, SCOTT
,
WEI, ANDY
Year of Publication
16.09.2010
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98
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Verfahren zur Herstellung eines Transistors mit erhöhten Drain- und Source-Gebieten, wobei eine reduzierte Anzahl von Prozessschritten erforderlich ist
by
LUNING, SCOTT
,
BENTUM
,
RALF VAN
,
KAMMLER, THORSTEN
Year of Publication
21.01.2010
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SOI-Transistor mit potentialfreiem Körper für die Informationsspeicherung mit asymmetrischen Drain/Source-Gebieten
by
MOHAPATRA, NIHAR-RANJAN
,
BENTUM
,
RALF VAN
Year of Publication
01.10.2009
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RAM-Zelle mit einem Transistor mit frei einstellbarem Körperpotential zur Informationsspeicherung mit asymmetrischen Drain/Source-Erweiterungsgebieten
by
VAN BENTUM
,
RALF
,
MOHAPATRA, NIHAR-RANJAN
Year of Publication
02.07.2009
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