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"RALF VAN BENTUM"
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"RALF VAN BENTUM"
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Semiconductor component e.g. field-effect transistor, producing method, involves forming endowed region in semiconductor region, covering semiconductor region by dielectric layer, and forming victim coating on semiconductor region
by
LENSKI, MARKUS
,
PRUEFER, EKKEHARD
,
BENTUM
,
RALF VAN
Year of Publication
31.10.2007
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TRENCH ISOLATION STRUCTURE HAVING DIFFERENT STRESS
by
HEMPEL KLAUS
,
STEJSKAL ROLAND
,
VAN BENTUM RALF
Year of Publication
05.07.2007
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Technique for forming transistors having raised drain and source regions with different heights
by
KAMMLER THORSTEN
,
VAN BENTUM RALF
,
LUNING SCOTT
Year of Publication
13.02.2007
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Technique for forming transistors having raised drain and source regions with different heights
by
van Bentum
,
Ralf
,
Luning, Scott
,
Kammler, Thorsten
Year of Publication
13.02.2007
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An advanced technique for forming transistors having raised drain and source regions with different height
by
BENTUM RALF VAN
,LUNING SCOTT,KAMMLER THORSTEN
Year of Publication
06.12.2006
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Technique for forming a transistor having raised drain and source regions with a reduced number of process steps
by
van Bentum
,
Ralf
,
Luning, Scott
,
Kammler, Thorsten
Year of Publication
05.12.2006
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Technique for forming a transistor having raised drain and source regions with a reduced number of process steps
by
KAMMLER THORSTEN
,
VAN BENTUM RALF
,
LUNING SCOTT
Year of Publication
05.12.2006
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Advanced technique for forming a transistor having raised drain and source regions
by
van Bentum
,
Ralf
,
Luning, Scott
,
Wei, Andy
Year of Publication
21.11.2006
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Advanced technique for forming a transistor having raised drain and source regions
by
WEI ANDY
,
VAN BENTUM RALF
,
LUNING SCOTT
Year of Publication
21.11.2006
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AN ADVANCED TECHNIQUE FOR FORMING TRANSISTORS HAVING RAISED DRAIN AND SOURCE REGIONS WITH DIFFERENT HEIGHT
by
KAMMLER THORSTEN
,
VAN BENTUM RALF
,
LUNING SCOTT
Year of Publication
18.10.2006
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An advanced technique for forming transistors having raised drain and source regions with different height
by
RALF VAN BENTUM
,
SCOTT LUNING
,
THORSTEN KAMMLER
Year of Publication
26.07.2006
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Semiconductor-on-insulator (SOI) device having source/drain silicon-germanium regions and method of manufacture
by
Yu, Bin
,
van Bentum
,
Ralf
Year of Publication
17.12.2002
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SOI MOSFET with graded source/drain silicide
by
Yu, Bin
,
van Bentum
,
Ralf
Year of Publication
15.10.2002
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Trench isolation structure for a semiconductor device with a different degree of corner rounding and a method of manufacturing the same
by
VAN BENTUM RALF
,KRUEGEL STEPHAN,BURBACH GERT
Year of Publication
25.01.2006
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TRENCH ISOLATION STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH A DIFFERENT DEGREE OF CORNER ROUNDING AND A METHOD OF MANUFACTURING THE SAME
by
VAN BENTUM
,
RALF
,
KRUEGEL, STEPHAN
,
BURBACH, GERT
Year of Publication
14.09.2005
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Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding
by
KRUEGEL STEPHAN
,
BURBACH GERT
,
VAN BENTUM RALF
Year of Publication
13.09.2005
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Method of manufacturing a trench isolation structure for a semiconductor device with a different degree of corner rounding
by
van Bentum
,
Ralf
,
Kruegel, Stephan
,
Burbach, Gert
Year of Publication
13.09.2005
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TRENCH ISOLATION STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH A DIFFERENT DEGREE OF CORNER ROUNDING AND A METHOD OF MANUFACTURING THE SAME
by
KRUEGEL STEPHAN
,
BURBACH GERT
,
VAN BENTUM RALF
Year of Publication
26.08.2005
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AN ADVANCED TECHNIQUE FOR FORMING TRANSISTORS HAVING RAISED DRAIN AND SOURCE REGIONS WITH DIFFERENT HEIGHT
by
VAN BENTUM
,
RALF
,
LUNING, SCOTT
,
KAMMLER, THORSTEN
Year of Publication
19.05.2005
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Technique for forming a transistor having raised drain and source regions with a reduced number of process steps
by
KAMMLER THORSTEN
,
VAN BENTUM RALF
,
LUNING SCOTT
Year of Publication
05.05.2005
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