Deposited ALD SiO2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures
Siddiqui, Shahab, Chowdhury, Murshed M, Brodsky, Maryjane, Rahim, Nilufa, Dai, Min, Krishnan, Siddarth, Fugardi, Steve, Wu, Ernest, Chou, Anthony, Narasimha, Shreesh, Li, Jinghong, Mcstay, Kevin, Linder, Barry, Maciejewski, Edward, Rettmann, Ryan, Mittl, Steven, Kwon, Unoh, Narayanan, Vijay, Henson, William, Schepis, Dominic, Chudzik, Michael
Published in ECS transactions (01.01.2013)
Published in ECS transactions (01.01.2013)
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Journal Article
Deposited ALD SiO 2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures
Siddiqui, Shahab, Chowdhury, Murshed M, Brodsky, Maryjane, Rahim, Nilufa, Dai, Min, Krishnan, Siddarth, Fugardi, Steve, Wu, Ernest, Chou, Anthony, Narasimha, Shreesh, Li, Jinghong, Mcstay, Kevin, Linder, Barry, Maciejewski, Edward, Rettmann, Ryan, Mittl, Steven, Kwon, Unoh, Narayanan, Vijay, Henson, William, Schepis, Dominic, Chudzik, Michael
Published in ECS transactions (03.05.2013)
Published in ECS transactions (03.05.2013)
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Journal Article
Reliability characterization of 32nm high-k metal gate SOI technology with embedded DRAM
Mittl, S., Swift, A., Wu, E., Ioannou, D., Fen Chen, Massey, G., Rahim, N., Hauser, M., Hyde, P., Lukaitis, J., Rauch, S., Saroop, S., Yanfeng Wang
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01.04.2012)
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Conference Proceeding
Electrical Characterization of Metal gate/High-k Dielectrics on GaAs Substrate
Budhraja, Vinay, Rahim, Nilufa, Misra, D.
Published in Meeting abstracts (Electrochemical Society) (29.08.2008)
Published in Meeting abstracts (Electrochemical Society) (29.08.2008)
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Journal Article
Deposited ALD SiO 2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures
Siddiqui, Shahab, Chowdhury, Murshed M, Brodsky, Maryjane, Rahim, Nilufa, Dai, Min, Krishnan, Siddarth, Fugardi, Steve, Wu, Ernest, Chou, Anthony, Narasimha, Shreesh, Li, Jinghong, Mcstay, Kevin, Linder, Barry, Maciejewski, Edward, Rettmann, Ryan, Mittl, Steven, Kwon, Unoh, Narayanan, Vijay, Henson, William, Schepis, Dominic, Chudzik, Michael
Published in Meeting abstracts (Electrochemical Society) (08.03.2013)
Published in Meeting abstracts (Electrochemical Society) (08.03.2013)
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Journal Article
Dual Stage Voltage Ramp Stress Test for Gate Dielectrics
BROCHU, JR. DAVID G, RAHIM NILUFA, LAROW CHARLES B, MERRILL TRAVIS S, DUFRESNE ROGER A, WU ERNEST Y
Year of Publication 26.07.2012
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Year of Publication 26.07.2012
Patent
Temperature Effects on Breakdown Characteristics of High- \kappa Gate Dielectrics With Metal Gates
Rahim, N., Misra, D.
Published in IEEE transactions on device and materials reliability (01.12.2008)
Published in IEEE transactions on device and materials reliability (01.12.2008)
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Magazine Article