Sustainable Semiconductor Manufacturing: The Role of Lithography
Gallagher, Emily, Ragnarsson, Lars-Ake, Rolin, Cedric
Published in IEEE transactions on semiconductor manufacturing (18.06.2024)
Published in IEEE transactions on semiconductor manufacturing (18.06.2024)
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Study of nitrogen impact on VFB-EOT roll-off by varying interfacial SiO2 thickness
CHO, Moonju, AKHEYAR, Amal, AOULAICHE, Marc, DEGRAEVE, Robin, RAGNARSSON, Lars-Ake, TSENG, Joshua, HOFFMANN, Thomas Y, GROESENEKEN, Guido
Published in Solid-state electronics (01.08.2011)
Published in Solid-state electronics (01.08.2011)
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LaSiOx- and Al2O3-Inserted Low-Temperature Gate-Stacks for Improved BTI Reliability in 3-D Sequential Integration
Wu, Zhicheng, Franco, Jacopo, Vandooren, Anne, Arimura, Hiroaki, Ragnarsson, Lars-Ake, Roussel, Philippe, Kaczer, Ben, Linten, Dimitri, Collaert, Nadine, Groeseneken, Guido
Published in IEEE transactions on electron devices (01.03.2022)
Published in IEEE transactions on electron devices (01.03.2022)
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Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices
Moonju Cho, Jae-Duk Lee, Aoulaiche, M., Kaczer, B., Roussel, P., Kauerauf, T., Degraeve, R., Franco, J., Ragnarsson, L., Groeseneken, G.
Published in IEEE transactions on electron devices (01.08.2012)
Published in IEEE transactions on electron devices (01.08.2012)
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Superior Reliability of Junctionless pFinFETs by Reduced Oxide Electric Field
Toledano-Luque, Maria, Matagne, Philippe, Sibaja-Hernandez, Arturo, Chiarella, Thomas, Ragnarsson, Lars-Ake, Soree, Bart, Cho, Moonju, Mocuta, Anda, Thean, Aaron
Published in IEEE electron device letters (01.12.2014)
Published in IEEE electron device letters (01.12.2014)
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Journal Article
On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET
Alam, Md. Nur Kutubul, Kaczer, Ben, Ragnarsson, Lars-Ake, Popovici, Mihaela, Rzepa, Gerhard, Horiguchi, Naoto, Heyns, Marc, Van Houdt, Jan
Published in IEEE journal of the Electron Devices Society (2019)
Published in IEEE journal of the Electron Devices Society (2019)
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Journal Article
Channel Length Dependence of PBTI in High-k First RMG Gate Stack Integration Scheme
Parihar, Narendra, Arutchelvan, Goutham, Franco, Jacopo, Baudot, Sylvain, Opedebeeck, Ann, Demuynck, Steven, Arimura, Hiroaki, Ragnarsson, Lars-Ake, Mitard, Jerome, De Heyn, Vincent, Mercha, Abdelkarim
Published in 2021 IEEE International Integrated Reliability Workshop (IIRW) (04.10.2021)
Published in 2021 IEEE International Integrated Reliability Workshop (IIRW) (04.10.2021)
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Conference Proceeding
Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors
Vereecke, Guy, De Coster, Hanne, Van Alphen, Senne, Carolan, Patrick, Bender, Hugo, Willems, Kherim, Ragnarsson, Lars-Åke, Van Dorpe, Pol, Horiguchi, Naoto, Holsteyns, Frank
Published in Microelectronic engineering (15.11.2018)
Published in Microelectronic engineering (15.11.2018)
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Journal Article
Improved NBTI reliability with sub-1-nanometer EOT ZrO2 gate dielectric compared with HfO2
Cho, Moonju, Kaczer, Ben, Kauerauf, Thomas, Ragnarsson, Lars-Ake, Groeseneken, Guido
Published in IEEE electron device letters (01.05.2013)
Published in IEEE electron device letters (01.05.2013)
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Journal Article
Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories
Ramesh, Sivaramakrishnan, Ajaykumar, Arjun, Ragnarsson, Lars-Åke, Breuil, Laurent, El Hajjam, Gabriel, Kaczer, Ben, Belmonte, Attilio, Nyns, Laura, Soulié, Jean-Philippe, Van den bosch, Geert, Rosmeulen, Maarten
Published in Micromachines (Basel) (08.09.2021)
Published in Micromachines (Basel) (08.09.2021)
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Journal Article
Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor
Lee, Jae Woo, Simoen, Eddy, Veloso, Anabela, Cho, Moon Ju, Boccardi, Guillaume, Ragnarsson, Lars-Åke, Chiarella, Thomas, Horiguchi, Naoto, Groeseneken, Guido, Thean, Aaron
Published in ACS applied materials & interfaces (25.09.2013)
Published in ACS applied materials & interfaces (25.09.2013)
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Journal Article
Interface Trap Characterization of a 5.8-Å EOT p-MOSFET Using High-Frequency On-Chip Ring Oscillator Charge Pumping Technique
CHO, Moonju, KACZER, Ben, AOULAICHE, Marc, DEGRAEVE, Robin, ROUSSEL, Philippe, FRANCO, Jacopo, KAUERAUF, Thomas, RAGNARSSON, Lars Ake, HOFFMANN, Thomas Y, GROESENEKEN, Guido
Published in IEEE transactions on electron devices (01.10.2011)
Published in IEEE transactions on electron devices (01.10.2011)
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Journal Article
Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis
Bhoir, Mandar S., Chiarella, Thomas, Ragnarsson, Lars Ake, Mitard, Jerome, Terzeiva, Valentina, Horiguchi, Naoto, Mohapatra, Nihar R.
Published in IEEE journal of the Electron Devices Society (2019)
Published in IEEE journal of the Electron Devices Society (2019)
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Journal Article
Reliability of thin ZrO2 gate dielectric layers
O'CONNOR, Robert, HUGHES, Greg, KAUERAUF, Thomas, RAGNARSSON, Lars-Ake
Published in Microelectronics and reliability (01.06.2011)
Published in Microelectronics and reliability (01.06.2011)
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Journal Article
Demonstration of sufficient BTI reliability for a 14-nm finFET 1.8 V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel
Hellings, Geert, Subirats, Alexandre, Franco, Jacopo, Schram, Tom, Ragnarsson, Lars-Ake, Witters, Liesbeth, Roussel, Philippe, Linten, Dimitri, Horiguchi, Naoto, Boschke, Roman
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
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Conference Proceeding
Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-$k$ Last Replacement Metal Gate Technology
Veloso, Anabela, Chew, Soon Aik, Higuchi, Yuichi, Ragnarsson, Lars-$Å$ke, Simoen, Eddy, Schram, Tom, Witters, Thomas, Van Ammel, Annemie, Dekkers, Harold, Tielens, Hilde, Devriendt, Katia, Heylen, Nancy, Sebaai, Farid, Brus, Stephan, Favia, Paola, Geypen, Jef, Bender, Hugo, Phatak, Anup, Chen, Michael S, Lu, Xinliang, Ganguli, Seshadri, Lei, Yu, Tang, Wei, Fu, Xinyu, Gandikota, Srinivas, Noori, Atif, Brand, Adam, Yoshida, Naomi, Thean, Aaron, Horiguchi, Naoto
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Scaling to Sub-1 nm Equivalent Oxide Thickness with Hafnium Oxide Deposited by Atomic Layer Deposition
Delabie, Annelies, Caymax, Matty, Brijs, Bert, Brunco, David P., Conard, Thierry, Sleeckx, Erik, Van Elshocht, Sven, Ragnarsson, Lars-Åke, De Gendt, Stefan, Heyns, Marc M.
Published in Journal of the Electrochemical Society (01.01.2006)
Published in Journal of the Electrochemical Society (01.01.2006)
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Journal Article
Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices
Xiao Zhang, Mitard, J., Ragnarsson, L., Hoffmann, T., Deal, M., Grubbs, M. E., Jing Li, Magyari-Kope, B., Clemens, B. M., Nishi, Y.
Published in IEEE transactions on electron devices (01.11.2012)
Published in IEEE transactions on electron devices (01.11.2012)
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Journal Article