Microwave Flexible Electronics Directly Transformed from Foundry‐Produced, Multilayered Monolithic Integrated Circuits
Qin, Guoxuan, Jung, Yei Hwan, Zhang, Huilong, Jiang, Ningyue, Ma, Pingxi, Stetson, Scott, Racanelli, Marco, Ma, Zhenqiang
Published in Advanced electronic materials (01.07.2022)
Published in Advanced electronic materials (01.07.2022)
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Journal Article
RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures
Qin, Guoxuan, Yan, Yuexing, Jiang, Ningyue, Ma, Jianguo, Ma, Pingxi, Racanelli, Marco, Ma, Zhenqiang
Published in Microelectronics and reliability (01.11.2012)
Published in Microelectronics and reliability (01.11.2012)
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Journal Article
Device and technology evolution for Si-based RF integrated circuits
Bennett, H.S., Brederlow, R., Costa, J.C., Cottrell, P.E., Huang, W.M., Immorlica, A.A., Mueller, J.-E., Racanelli, M., Shichijo, H., Weitzel, C.E., Bin Zhao
Published in IEEE transactions on electron devices (01.07.2005)
Published in IEEE transactions on electron devices (01.07.2005)
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Journal Article
A study of ultra-high performance SiGe HBT devices on SOI
Thibeault, Todd, Preisler, Edward, Jie Zheng, Li Dong, Chaudhry, Samir, Jordan, Scott, Racanelli, Marco
Published in 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.09.2013)
Published in 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.09.2013)
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Conference Proceeding
Cryogenic operation of a 24 GHz MMIC SiGe HBT medium power amplifier
Qin, Guoxuan, Jiang, Ningyue, Seo, Jung-Hun, Cho, Namki, Ponchak, George E, van der Weide, Daniel, Ma, Pingxi, Stetson, Scott, Racanelli, Marco, Ma, Zhenqiang
Published in Semiconductor science and technology (10.12.2010)
Published in Semiconductor science and technology (10.12.2010)
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Journal Article
Thermal resistance of SiGe HBTs at high power densities
Li, Hui, Ma, Zhenqiang, Ma, Pingxi, Racanelli, Marco
Published in Semiconductor science and technology (01.01.2007)
Published in Semiconductor science and technology (01.01.2007)
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Journal Article
Conference Proceeding
A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design
Rotella, F., Bhattacharya, B.K., Blaschke, V., Matloubian, M., Brotman, A., Yuhua Cheng, Divecha, R., Howard, D., Lampaert, K., Miliozzi, P., Racanelli, M., Singh, P., Zampardi, P.J.
Published in IEEE transactions on electron devices (01.07.2005)
Published in IEEE transactions on electron devices (01.07.2005)
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Journal Article
Proton radiation tolerance of SiGe power HBTs
Jiang, Ningyue, Ma, Zhenqiang, Ma, Pingxi, Racanelli, Marco
Published in Semiconductor science and technology (01.01.2007)
Published in Semiconductor science and technology (01.01.2007)
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Journal Article
Conference Proceeding
Impact of Proton Radiation on the Large-Signal Power Performance of SiGe Power HBTs
Ningyue Jiang, Zhenqiang Ma, Pingxi Ma, Racanelli, M.
Published in IEEE transactions on nuclear science (01.08.2006)
Published in IEEE transactions on nuclear science (01.08.2006)
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Journal Article
Effects of Proton Radiation on Device Modeling of SiGe Power HBTs
Jiang, Ningyue, Ma, Zhenqiang, Ma, Pingxi, Racanelli, Marco
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
Investigation of Scaling Limits for PECVD SiN and ALD HfO2/Al2O3 Integrated MIM Capacitors
Dornisch, Dieter, Wilk, Glen, Li, Guangming, Ring, Kenneth M M., Howard, David J J., Racanelli, Marco
Published in ECS transactions (27.04.2007)
Published in ECS transactions (27.04.2007)
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Journal Article
3-W SiGe power HBTs for wireless applications
Jiang, Ningyue, Ma, Zhenqiang, Wang, Guogong, Ma, Pingxi, Racanelli, Marco
Published in Materials science in semiconductor processing (01.02.2005)
Published in Materials science in semiconductor processing (01.02.2005)
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Journal Article
A high performance, low complexity 14V Complementary BiCMOS process built on bulk silicon
Thibeault, T, Preisler, E, Jie Zheng, Lynn Lao, Hurwitz, P, Racanelli, M
Published in 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.10.2010)
Published in 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.10.2010)
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Conference Proceeding
Demonstration of a 270 GHz fT SiGe-C HBT within a manufacturing-proven 0.18μm BiCMOS process without the use of a raised extrinsic base
Preisler, E., Lanzerotti, L., Hurwitz, P.D., Racanelli, M.
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
Published in 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01.10.2008)
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Conference Proceeding
A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design : Integrated Circuits Technologies for RF Circuit Applications
ROTELLA, Francis, BHATTACHARYA, Bijan K, RACANELLI, Marco, SINGH, Paramjit, ZAMPARDI, Pete J, BLASCHKE, Volker, MATLOUBIAN, Mishel, BROTMAN, Andy, YUHUA CHENG, DIVECHA, Rajesh, HOWARD, David, LAMPAERT, Koen, MILIOZZI, Paolo
Published in IEEE transactions on electron devices (2005)
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Published in IEEE transactions on electron devices (2005)
Journal Article