Interface control in GaAs/GaInP superlattices grown by OMCVD
Bhat, R., Koza, M.A., Brasil, M.J.S.P., Nahory, R.E., Palmstrom, C.J., Wilkens, B.J.
Published in Journal of crystal growth (01.11.1992)
Published in Journal of crystal growth (01.11.1992)
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Journal Article
Optical properties and band structure of short-period GaAs/AlAs superlattices
Finkman, E., Sturge, M.D., Meynadier, M.-H., Nahory, R.E., Tamargo, M.C., Hwang, D.M., Chang, C.C.
Published in Journal of luminescence (01.12.1987)
Published in Journal of luminescence (01.12.1987)
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Journal Article
OMCVD growth of InP, InGaAs, and InGaAsP on (110) InP substrates
Bhat, R., Koza, M.A., Hwang, D.M., Brasil, M.J.S.P., Nahory, R.E., Oe, K.
Published in Journal of crystal growth (01.11.1992)
Published in Journal of crystal growth (01.11.1992)
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Journal Article
Conference Proceeding
Surface stoichiometry effects on ZnSe/GaAs heteroepitaxy
Tamargo, M.C., Nahory, R.E., Skromme, B.J., Shibli, S.M., Weaver, A.L., Martin, R.J., Farrell, H.H.
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Journal Article
Conference Proceeding
Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP
Laufer, P.M., Pollak, F.H., Nahory, R.E., Pollack, M.A.
Published in Solid state communications (01.11.1980)
Published in Solid state communications (01.11.1980)
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Journal Article
Raman scattering from electronic excitations in periodically δ-doped GaAs
Maciel, A.C., Tatham, M., Ryan, J.F., Worlock, J.M., Nahory, R.E., Harbison, J.P., Florez, L.T.
Published in Surface science (01.04.1990)
Published in Surface science (01.04.1990)
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Journal Article
Conference Proceeding
High-performance GaAs MESFETs fabricated on misoriented
Lo, Y.H., Harbison, J., Abeles, J.H., Lee, T.P., Nahory, R.E.
Published in IEEE electron device letters (01.08.1988)
Published in IEEE electron device letters (01.08.1988)
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Journal Article
Real-time optical diagnostics for measuring and controlling epitaxial growth
Aspnes, D.E., Kamiya, I., Tanaka, H., Bhat, R., Florez, L.T., Harbison, J.P., Quinn, W.E., Tamargo, M., Gregory, S., Pudensi, M.A.A., Schwarz, S.A., Brasil, M.J.S.P., Nahory, R.E.
Published in Thin solid films (25.03.1993)
Published in Thin solid films (25.03.1993)
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Journal Article
Conference Proceeding
Molecular beam epitaxy of Zn(Se,Te) alloys and superlattices
Turco-Sandroff, F.S., Nahory, R.E., Brasil, M.J.S.P., Martin, R.J., Beserman, R., Farrow, L.A., Worlock, J.M., Weaver, A.L.
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Journal Article
Conference Proceeding
VB-1 an N-channel In 0.53 Ga 0.47 As plasma oxide insulated gate inversion-mode fet
Liao, A.S.H., Tell, B., Leheny, R.F., Chang, T.Y., Nahory, R.E.
Published in IEEE transactions on electron devices (01.10.1982)
Published in IEEE transactions on electron devices (01.10.1982)
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Journal Article
VB-1 an N-channel In0.53Ga0.47As plasma oxide insulated gate inversion-mode fet
Liao, A.S.H., Tell, B., Leheny, R.F., Chang, T.Y., Nahory, R.E.
Published in IEEE transactions on electron devices (01.10.1982)
Published in IEEE transactions on electron devices (01.10.1982)
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Journal Article
IIIA-2 hot carrier effects in 1.3 µm In1-xGaxAsyP1-yLEDs
Nahory, R.E., Shah, J., Leheny, R.F., Temkin, H.T.
Published in IEEE transactions on electron devices (01.10.1981)
Published in IEEE transactions on electron devices (01.10.1981)
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Journal Article
IIIA-2 hot carrier effects in 1.3 µm In 1-x Ga x As y P 1-y LEDs
Nahory, R.E., Shah, J., Leheny, R.F., Temkin, H.T.
Published in IEEE transactions on electron devices (01.10.1981)
Published in IEEE transactions on electron devices (01.10.1981)
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Journal Article