Synthesis and modification of poly(ethyl 2-(imidazol-1-yl)acrylate) (PEImA)
Rössel, C., Billing, M., Görls, H., Festag, G., Grube, M., Bellstedt, P., Nischang, I., Schacher, F.H.
Published in Polymer (Guilford) (03.10.2017)
Published in Polymer (Guilford) (03.10.2017)
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Journal Article
Controlling tetragonality and crystalline orientation in BaTiO3 nano-layers grown on Si
Abel, S, Sousa, M, Rossel, C, Caimi, D, Rossell, M D, Erni, R, Fompeyrine, J, Marchiori, C
Published in Nanotechnology (19.07.2013)
Published in Nanotechnology (19.07.2013)
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Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
Daix, N., Uccelli, E., Czornomaz, L., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Shiu, K.-T., Cheng, C.-W., Krishnan, M., Lofaro, M., Kobayashi, M., Sadana, D., Fompeyrine, J.
Published in APL materials (01.08.2014)
Published in APL materials (01.08.2014)
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Journal Article
CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
Czornomaz, L., El Kazzi, M., Hopstaken, M., Caimi, D., Mächler, P., Rossel, C., Bjoerk, M., Marchiori, C., Siegwart, H., Fompeyrine, J.
Published in Solid-state electronics (01.08.2012)
Published in Solid-state electronics (01.08.2012)
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Journal Article
Strain effects on n-InGaAs heterostructure-on-insulator made by direct wafer bonding
Rossel, C., Weigele, P., Czornomaz, L., Daix, N., Caimi, D., Sousa, M., Fompeyrine, J.
Published in Solid-state electronics (01.08.2014)
Published in Solid-state electronics (01.08.2014)
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Journal Article
SrHfO3 as gate dielectric for future CMOS technology
ROSSEL, C, SOUSA, M, GERMANN, R, TAPPONNIER, A, BABICH, K, MARCHIORI, C, FOMPEYRINE, J, WEBB, D, CAIMI, D, MEREU, B, ISPAS, A, LOCQUET, J. P, SIEGWART, H
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Conference Proceeding
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An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
Djara, V., Deshpande, V., Uccelli, E., Daix, N., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Shiu, K.-T, Weng, C.-W, Krishnan, M., Lofaro, M., Steiner, R., Sadana, D., Lubyshev, D., Liu, A., Czornomaz, L., Fompeyrine, J.
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
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Conference Proceeding
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GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
RICHTER, M, ROSSEL, C, FOMPEYRINE, J, WEBB, D. J, TOPURIA, T, GERL, C, SOUSA, M, MARCHIORI, C, CAIMI, D, SIEGWART, H, RICE, P. M
Published in Journal of crystal growth (15.05.2011)
Published in Journal of crystal growth (15.05.2011)
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Journal Article
Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon
Czornomaz, L., Daix, N., Kerber, P., Lister, K., Caimi, D., Rossel, C., Sousa, M., Uccelli, E., Fompeyrine, J.
Published in 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2013)
Published in 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2013)
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Conference Proceeding
1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
El Kazzi, M., Webb, D.J., Czornomaz, L., Rossel, C., Gerl, C., Richter, M., Sousa, M., Caimi, D., Siegwart, H., Fompeyrine, J., Marchiori, C.
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Conference Proceeding
Epitaxial germanium-on-insulator grown on (001) Si
Seo, J.W., Dieker, Ch, Tapponnier, A., Marchiori, Ch, Sousa, M., Locquet, J.-P., Fompeyrine, J., Ispas, A., Rossel, C., Panayiotatos, Y., Sotiropoulos, A., Dimoulas, A.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Conference Proceeding
Nonvolatile resistive memory devices based on hydrogenated amorphous carbon
Dellmann, L., Sebastian, A., Jonnalagadda, P., Santini, C. A., Koelmans, W. W., Rossel, C., Eleftheriou, E.
Published in 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2013)
Published in 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2013)
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Conference Proceeding
Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices
Andersson, C., Rossel, C., Sousa, M., Webb, D.J., Marchiori, C., Caimi, D., Siegwart, H., Panayiotatos, Y., Dimoulas, A., Fompeyrine, J.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Thermal stability of ultra-thin InGaAs-on-insulator substrates
Daix, N., Czornomaz, L., Caimi, D., Rossel, C., Sousa, M., Fompeyrine, J.
Published in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2013)
Published in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2013)
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Conference Proceeding
Co-integrating high mobility channels for future CMOS, from substrate to circuits
Czornomaz, L., Daix, N., Uccelli, E., Caimi, D., Sousa, M., Rossel, C., Siegwart, H., Marchiori, C., Fompeyrine, J.
Published in 26th International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2014)
Published in 26th International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2014)
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Conference Proceeding
Thermal stability of SrRuO3 epitaxial layers under forming-gas anneal
Halley, D, Rossel, C, Widmer, D, Wolf, H, Gariglio, S
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.06.2004)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.06.2004)
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Journal Article
Microfabricated ultrasensitive piezoresistive cantilevers for torque magnetometry
Brugger, J, Despont, M, Rossel, C, Rothuizen, H, Vettiger, P, Willemin, M
Published in Sensors and actuators. A. Physical. (30.03.1999)
Published in Sensors and actuators. A. Physical. (30.03.1999)
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In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction
Webb, D.J., Fompeyrine, J., Nakagawa, S., Dimoulas, A., Rossel, C., Sousa, M., Germann, R., Alvarado, S.F., Locquet, J.P., Marchiori, C., Siegwart, H., Callegari, A., Kiewra, E., Sun, Y., De Souza, J., Hoffmann, N.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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