High-temperature modeling of AlGaN/GaN HEMTs
Vitanov, S., Palankovski, V., Maroldt, S., Quay, R.
Published in Solid-state electronics (01.10.2010)
Published in Solid-state electronics (01.10.2010)
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Journal Article
Voltage-margin limiting mechanisms of AlScN-based HEMTs
Döring, P., Krause, S., Waltereit, P., Brückner, P., Leone, S., Streicher, I., Mikulla, M., Quay, R.
Published in Applied physics letters (17.07.2023)
Published in Applied physics letters (17.07.2023)
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Journal Article
Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers
Neininger, Philipp, John, L., Zink, M., Meder, D., Kuri, M., Tessmann, A., Friesicke, C., Mikulla, M., Quay, R., Zwick, Thomas
Published in IEEE microwave and wireless components letters (01.06.2022)
Published in IEEE microwave and wireless components letters (01.06.2022)
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Journal Article
Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs
Doring, P., Basler, M., Reiner, R., Monch, S., Driad, R., Dammann, M., Mikulla, M., Quay, R.
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
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Conference Proceeding
Trapping Effects at the Drain Edge in 600 V GaN-on-Si HEMTs
Wespel, M., Polyakov, V. M., Dammann, M., Reiner, R., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.
Published in IEEE transactions on electron devices (01.02.2016)
Published in IEEE transactions on electron devices (01.02.2016)
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Journal Article
Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies
Neininger, P., Mikulla, M., Döring, P., Dammann, M., Thome, F., Krause, S., Schwantuschke, D., Brückner, P., Friesicke, C., Quay, R.
Published in e-Prime (01.06.2023)
Published in e-Prime (01.06.2023)
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Journal Article
A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-band
Friesicke, C., Feuerschutz, P., Quay, R., Ambacher, O., Jacob, A. F.
Published in 2016 IEEE MTT-S International Microwave Symposium (IMS) (01.05.2016)
Published in 2016 IEEE MTT-S International Microwave Symposium (IMS) (01.05.2016)
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Conference Proceeding
GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE
Lim, T, Aidam, R, Waltereit, P, Henkel, T, Quay, R, Lozar, R, Maier, T, Kirste, L, Ambacher, O
Published in IEEE electron device letters (01.07.2010)
Published in IEEE electron device letters (01.07.2010)
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Journal Article
High-Efficiency, High-Temperature Continuous Class-E Sub-Waveform Solution AlGaN/GaN Power Amplifier
Carrubba, V., Maroldt, S., Musser, M., Ture, E., Dammann, M., van Raay, F., Quay, R., Bruckner, P., Ambacher, O.
Published in IEEE microwave and wireless components letters (01.08.2015)
Published in IEEE microwave and wireless components letters (01.08.2015)
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Journal Article
Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
Gütle, F, Polyakov, V M, Baeumler, M, Benkhelifa, F, Müller, S, Dammann, M, Cäsar, M, Quay, R, Mikulla, M, Wagner, J, Ambacher, O
Published in Semiconductor science and technology (01.12.2012)
Published in Semiconductor science and technology (01.12.2012)
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Journal Article
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M., Baeumler, M., Polyakov, V., Dammann, M., Reiner, R., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.
Published in Microelectronics and reliability (01.12.2014)
Published in Microelectronics and reliability (01.12.2014)
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Journal Article
Conference Proceeding
Development of a high transconductance GaN MMIC technology for millimeter wave applications
Haupt, C., Maroldt, S., Quay, R., Pletschen, W., Leuther, A., Ambacher, O.
Published in Physica status solidi. C (01.02.2011)
Published in Physica status solidi. C (01.02.2011)
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Journal Article
102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz
Haifeng Sun, Alt, A.R., Benedickter, H., Bolognesi, C.R., Feltin, E., Carlin, J.-F., Gonschorek, M., Grandjean, N., Maier, T., Quay, R.
Published in IEEE electron device letters (01.08.2009)
Published in IEEE electron device letters (01.08.2009)
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Journal Article
GaN HEMTs and MMICs for space applications
Waltereit, P, Bronner, W, Quay, R, Dammann, M, Cäsar, M, Müller, S, Reiner, R, Brückner, P, Kiefer, R, van Raay, F, Kühn, J, Musser, M, Haupt, C, Mikulla, M, Ambacher, O
Published in Semiconductor science and technology (01.07.2013)
Published in Semiconductor science and technology (01.07.2013)
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Journal Article
Analysis and modeling of GaN-based multi field plate Schottky power diodes
Weiss, B., Reiner, R., Waltereit, P., Quay, R., Ambacher, O.
Published in 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL) (01.06.2016)
Published in 2016 IEEE 17th Workshop on Control and Modeling for Power Electronics (COMPEL) (01.06.2016)
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Conference Proceeding
AlGaN/GaN power amplifiers for ISM applications
Krausse, D., Benkhelifa, F., Reiner, R., Quay, R., Ambacher, O.
Published in Solid-state electronics (01.08.2012)
Published in Solid-state electronics (01.08.2012)
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Journal Article
The state of the art in beyond 5G distributed massive multiple-input multiple-output communication system solutions
Meyer, E., Kruglov, D., Krivic, M., Tanveer, M., Argaez-Ramirez, R., Zhang, Y., Briseno Ojeda, A., Smirnova, K., Alekseev, K., Safari Mugisho, M., Cimbili, B., Farid, N., Dang, Y., Shahid, M., Ensan, M., Banar, J., Bao, H., Matters-Kammerer, M., Gustavsson, U., Demuynck, F., Zwick, T., Acar, M., Fager, C., van der Heijden, M., Ivashina, M., Caratelli, D., Hasselblad, M., Ulusoy, C., Smolders, A.B., Eriksson, K., Johannson, M., Maaskant, R., Quay, R., Floriot, D., Bao, M., Bronckers, L.A., Fridén, J., van Beurden, M.C., de Hon, B.P., Kolitsidas, C., Blanco, D., Willems, F.M.J., Eriksson, T., Filippi, A., Ponzini, F., Johannsen, U.
Published in Open research Europe (2022)
Published in Open research Europe (2022)
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