Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality
Liang, Yan-Kui, Wu, Jui-Sheng, Teng, Chih-Yu, Ko, Hua-Lun, Luc, Quang-Ho, Su, Chun-Jung, Chang, Edward-Yi, Lin, Chun-Hsiung
Published in IEEE electron device letters (01.09.2021)
Published in IEEE electron device letters (01.09.2021)
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Journal Article
Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment
Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Shih-Chien Liu, Yen-Ku Lin, Sze, Simon M., Chang, Edward Yi
Published in IEEE transactions on electron devices (01.09.2016)
Published in IEEE transactions on electron devices (01.09.2016)
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Journal Article
InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment
Po-Chun Chang, Quang-Ho Luc, Yueh-Chin Lin, Yen-Ku Lin, Chia-Hsun Wu, Sze, Simon M., Chang, Edward Yi
Published in IEEE electron device letters (01.03.2017)
Published in IEEE electron device letters (01.03.2017)
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Journal Article
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
Do, Huy Binh, Luc, Quang Ho, Ha, Minh Thien Huu, Huynh, Sa Hoang, Nguyen, Tuan Anh, Lin, Yueh Chin, Chang, Edward Yi
Published in AIP advances (01.08.2017)
Published in AIP advances (01.08.2017)
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Journal Article
Effect of Sn-substituted Ga and In dopant content on the structural, electrical, and optical properties of p-type X-doped SnO2 (X = Ga and In) films: Testing the photoelectronic effect of X-doped SnO2/n-Si junctions
Le, Tran, Dang, Huu Phuc, Duong, Anh Quang, Luc, Quang Ho
Published in Journal of photochemistry and photobiology. A, Chemistry. (01.05.2019)
Published in Journal of photochemistry and photobiology. A, Chemistry. (01.05.2019)
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Journal Article
Eliminating the charge compensation effect in Ga-doped SnO2 films by N doping
Dang, Huu Phuc, Luc, Quang Ho, Nguyen, Thanh Tung, Le, Tran
Published in Journal of alloys and compounds (05.03.2019)
Published in Journal of alloys and compounds (05.03.2019)
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Journal Article
Studying the influence of deposition temperature and nitrogen contents on the structural, optical, and electrical properties of N-doped SnO2 films prepared by direct current magnetron sputtering
Nguyen, Thanh Tung, Dang, Huu Phuc, Luc, Quang Ho, Le, Tran
Published in Ceramics international (01.05.2019)
Published in Ceramics international (01.05.2019)
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Journal Article
E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering
Wu, Jui-Sheng, Lee, Chih-Chieh, Wu, Chia-Hsun, Kao, Min-Lu, Weng, You-Chen, Yang, Chih-Yi, Luc, Quang Ho, Lee, Ching-Ting, Ueda, Daisuke, Chang, Edward Yi
Published in IEEE electron device letters (01.09.2021)
Published in IEEE electron device letters (01.09.2021)
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Journal Article
Inversion-mode InGaAs FinFETs for RF applications
Wu, Jing-Yuan, Huang, Ping, Luc, Quang-Ho, Chiang, Yung-Chun, Yu, Hsiang-Chan, Chen, Mu-Yu, Yi Chang, Edward
Published in Applied physics express (01.09.2023)
Published in Applied physics express (01.09.2023)
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Journal Article
Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
Quang Ho Luc, Huy Binh Do, Minh Thien Huu Ha, Hu, Chenming Calvin, Yueh Chin Lin, Chang, Edward Yi
Published in IEEE electron device letters (01.12.2015)
Published in IEEE electron device letters (01.12.2015)
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Journal Article
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
Luc, Quang Ho, Yang, Kun Sheng, Lin, Jia Wei, Chang, Chia Chi, Do, Huy Binh, Huynh, Sa Hoang, Ha, Minh Thien Huu, Nguyen, Tuan Anh, Lin, Yueh Chin, Hu, Chenming, Chang, Edward Yi
Published in IEEE electron device letters (01.03.2018)
Published in IEEE electron device letters (01.03.2018)
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Journal Article
High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
Chia-Hsun Wu, Ping-Cheng Han, Shih-Chien Liu, Ting-En Hsieh, Lumbantoruan, Franky Juanda, Yu-Hsuan Ho, Jian-You Chen, Kun-Sheng Yang, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Quang Ho Luc, Yueh-Chin Lin, Chang, Edward Yi
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
Yen-Ku Lin, Noda, Shuichi, Chia-Ching Huang, Hsiao-Chieh Lo, Chia-Hsun Wu, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi
Published in IEEE electron device letters (01.06.2017)
Published in IEEE electron device letters (01.06.2017)
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Journal Article
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
Quang Ho Luc, Chang, Edward Yi, Hai Dang Trinh, Yueh Chin Lin, Hong Quan Nguyen, Yuen Yee Wong, Huy Binh Do, Salahuddin, Sayeef, Hu, Chenming Calvin
Published in IEEE transactions on electron devices (01.08.2014)
Published in IEEE transactions on electron devices (01.08.2014)
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Journal Article