A high speed asymmetric T-shape cell in NMOS-selected phase change memory chip
Wang, J.H., Zhou, J., Zhou, W.L., Tong, H., Huang, D.Q., Sun, J.J., Zhang, L., Long, X.M., Chen, Y., Qu, L.W., Miao, X.S.
Published in Solid-state electronics (01.03.2013)
Published in Solid-state electronics (01.03.2013)
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Journal Article
SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer
Qu, L.W., Miao, X.S., Sheng, J.J., Li, Z., Sun, J.J., An, P., Huang, Jiandong, Yang, Daohong, Liu, Chang
Published in Solid-state electronics (01.02.2011)
Published in Solid-state electronics (01.02.2011)
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Journal Article