Evidence that N 2O is a stronger oxidizing agent than O 2 for both Ta 2O 5 and bare Si below 1000 °C and temperature for minimum low- K interfacial oxide for high- K dielectric on Si
Lau, W.S., Qian, P.W., Han, Taejoon, Sandler, Nathan P., Che, S.T., Ang, S.E., Tung, C.H., Sheng, T.T.
Published in Microelectronics and reliability (2007)
Published in Microelectronics and reliability (2007)
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Journal Article
Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare si below 1000 °C and temperature for minimum low-K interfacial oxide for high-K dielectric on Si
LAU, W. S, QIAN, P. W, HAN, Taejoon, SANDIER, Nathan P, CHE, S. T, ANG, S. E, TUNG, C. H, SHENG, T. T
Published in Microelectronics and reliability (01.02.2007)
Published in Microelectronics and reliability (01.02.2007)
Get full text
Journal Article