All-GaN-Integrated Cascode Heterojunction Field Effect Transistors
Sheng Jiang, Kean Boon Lee, Guiney, Ivor, Miaja, Pablo F., Zaidi, Zaffar H., Hongtu Qian, Wallis, David J., Forsyth, Andrew J., Humphreys, Colin J., Houston, Peter A.
Published in IEEE transactions on power electronics (01.11.2017)
Published in IEEE transactions on power electronics (01.11.2017)
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Rapid detection of capture and emission processes in surface and buffer traps: Understanding dynamic degradation in GaN power devices
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Published in Power electronic devices and components (01.08.2024)
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2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs
Zhang, Haochen, Wang, Hu, Zhang, Mingshuo, Yang, Lei, Ye, Yankai, Qian, Hongtu, Zhang, Xinchuan, Zuo, Chengjie, Yang, Yansong, Pei, Yi, Sun, Haiding
Published in IEEE electron device letters (01.07.2024)
Published in IEEE electron device letters (01.07.2024)
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Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V
Lee, Kean B., Guiney, Ivor, Jiang, Sheng, Zaidi, Zaffar H., Qian, Hongtu, Wallis, David J., Uren, Michael J., Kuball, Martin, Humphreys, Colin J., Houston, Peter A.
Published in Applied physics express (01.03.2015)
Published in Applied physics express (01.03.2015)
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