Electrical properties of silicon, heat-treated at 530 °C with subsequent electron bombardment
Neimash, V. B., Siratskii, V. M., Krachinskii, A. N., Puzenko, E. A.
Published in Semiconductors (Woodbury, N.Y.) (01.09.1998)
Published in Semiconductors (Woodbury, N.Y.) (01.09.1998)
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