Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy
Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Yu, Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K., Preobrazhenskiy, V. V.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2021)
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Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature
Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2018)
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Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates
Petrushkov, M O, Putyato, M A, Gutakovsky, A K, Preobrazhenskii, V V, Loshkarev, I D, Emelyanov, E A, Semyagin, B R, Vasev, A V
Published in Journal of physics. Conference series (01.08.2016)
Published in Journal of physics. Conference series (01.08.2016)
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Curvature-tuned InAs-based shells containing two-dimensional electron gas
Mutilin, S V, Vorobyova, Ju S, Vorob'ev, A B, Putyato, M A, Prinz, V Ya
Published in Journal of physics. D, Applied physics (14.09.2011)
Published in Journal of physics. D, Applied physics (14.09.2011)
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Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers
Baidakova, M V, Bert, N A, Chaldyshev, V V, Nevedomsky, V N, Yagovkina, M A, Preobrazhenskii, V V, Putyato, M A, Semyagin, B R
Published in Acta crystallographica. Section B, Structural science (01.02.2013)
Published in Acta crystallographica. Section B, Structural science (01.02.2013)
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High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser
Kisel, V E, Rudenkov, A S, Pavlyuk, A A, Kovalyov, A A, Preobrazhenskii, V V, Putyato, M A, Rubtsova, N N, Semyagin, B R, Kuleshov, N V
Published in Optics letters (15.06.2015)
Published in Optics letters (15.06.2015)
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Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial
Snigirev, L. A., Ushanov, V. I., Ivanov, A. A., Bert, N. A., Kirilenko, D. A., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. P., Kasatkin, I. A., Chaldyshev, V. V.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2023)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2023)
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Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy
Semyagin, B. R., Kolesnikov, A. V., Putyato, M. A., Preobrazhenskii, V. V., Popova, T. B., Ushanov, V. I., Chaldyshev, V. V.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2023)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2023)
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Semiconductor quantum well based shutters for NIR laser mode-locking with ∼ GHz repetition rate
Rubtsova, N N, Kovalyov, A A, Ledovskikh, D V, Preobrazhenskii, V V, Putyato, M A, Semyagin, B R, Kuznetsov, S A, Pivtsov, V S
Published in Journal of physics. Conference series (01.11.2021)
Published in Journal of physics. Conference series (01.11.2021)
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Journal Article
Optical shutters for a compact femtosecond Yb:KYW laser
Rubtsova, N N, Kovalyov, A A, Ledovskikh, D V, Preobrazhenskii, V V, Putyato, M A, Semyagin, B R, Kuznetsov, S A, Pivtsov, V S, Semenko, A V
Published in Laser physics (01.02.2020)
Published in Laser physics (01.02.2020)
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Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates
Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Vasev, A. V., Loshkarev, D. I., Yesin, M. Yu, Komkov, O. S., Firsov, D. D., Preobrazhenskii, V. V.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2020)
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Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region
Utochkin, V. V., Fadeev, M. A., Krishtopenko, S. S., Rumyantsev, V. V., Aleshkin, V. Ya, Dubinov, A. A., Morozov, S. V., Semyagin, B. R., Putyato, M. A., Emelyanov, E. A., Preobrazhenskii, V. V., Gavrilenko, V. I.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2020)
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A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates
Emelyanov, E. A., Nastovjak, A. G., Petrushkov, M. O., Esin, M. Yu, Gavrilova, T. A., Putyato, M. A., Schwartz, N. L., Shvets, V. A., Vasev, A. V., Semyagin, B. R., Preobrazhenskii, V. V.
Published in Technical physics letters (01.02.2020)
Published in Technical physics letters (01.02.2020)
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