The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
Feil, Maximilian W., Huerner, Andreas, Puschkarsky, Katja, Schleich, Christian, Aichinger, Thomas, Gustin, Wolfgang, Reisinger, Hans, Grasser, Tibor
Published in Crystals (Basel) (01.12.2020)
Published in Crystals (Basel) (01.12.2020)
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Journal Article
Investigation of threshold voltage stability of SiC MOSFETs
Peters, Dethard, Aichinger, Thomas, Basler, Thomas, Rescher, Gerald, Puschkarsky, Katja, Reisinger, Hans
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding
Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental
Ullmann, Bianka, Jech, Markus, Puschkarsky, Katja, Rott, Gunnar Andreas, Waltl, Michael, Illarionov, Yury, Reisinger, Hans, Grasser, Tibor
Published in IEEE transactions on electron devices (01.01.2019)
Published in IEEE transactions on electron devices (01.01.2019)
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Journal Article
Threshold voltage hysteresis in SiC MOSFETs and its impact on circuit operation
Puschkarsky, Katja, Reisinger, Hans, Aichinger, Thomas, Gustin, Wolfgang, Grasser, Tibor
Published in 2017 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2017)
Published in 2017 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2017)
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Conference Proceeding
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs
Puschkarsky, Katja, Grasser, Tibor, Aichinger, Thomas, Gustin, Wolfgang, Reisinger, Hans
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01.03.2018)
Published in 2018 IEEE International Reliability Physics Symposium (IRPS) (01.03.2018)
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Conference Proceeding
Circuit relevant HCS lifetime assessments at single transistors with emulated variable loads
Schlunder, Christian, Proebster, F., Berthold, J., Puschkarsky, Katja, Georgakos, Georg, Gustin, Wolfgang, Reisinger, Hans
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
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Conference Proceeding
Relevance of off-state NBTI degradation in depletion HVNMOS transistor for power application
Strasser, Marc, Stradiotto, Roberta, Aresu, Stefano, Puschkarsky, Katja, Poehle, Holger, Gustin, Wolfgang
Published in 2018 International Integrated Reliability Workshop (IIRW) (01.10.2018)
Published in 2018 International Integrated Reliability Workshop (IIRW) (01.10.2018)
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Conference Proceeding
Reliability and modeling: What to simulate and how?
Zhang, Rui, Verzellesi, Giovanni, Puzzilli, Giuseppina, Puschkarsky, Katja, LaRow, Charles, Shluger, Alexander, Tkachev, Yuri, Villena, Marco A., Yang, Kexin, Metaev, Elnatan, Pesic, Milan, Lloyd, Jim, Ring, Matt, Paliwoda, Peter, Tan, Sheldon, Young, Chadwin
Published in 2017 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2017)
Published in 2017 IEEE International Integrated Reliability Workshop (IIRW) (01.10.2017)
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Conference Proceeding