Surface morphologies of Be-doped homoepitaxial InP films
Cotta, M.A., de Carvalho, M.M.G., Pudenzi, M.A.A., Landers, K.M.I., de Souza, C.F., Martins, R.B., Landers, R., Teschke, O.
Published in Journal of crystal growth (1996)
Published in Journal of crystal growth (1996)
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Conference Proceeding
Study of the magnetic properties on Mn and As co-implanted GaAs
De Biasi, E., Pudenzi, M.A.A., Behar, M., Carvasan, F., Knobel, M.
Published in Journal of magnetism and magnetic materials (01.07.2008)
Published in Journal of magnetism and magnetic materials (01.07.2008)
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Journal Article
X-ray multiple diffraction on the shallow junction of B in Si(0 0 1)
Orloski, R.V., Pudenzi, M.A.A., Hayashi, M.A., Swart, J.W., Cardoso, L.P.
Published in Journal of molecular catalysis. A, Chemical (16.03.2005)
Published in Journal of molecular catalysis. A, Chemical (16.03.2005)
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Journal Article
Conference Proceeding
Residual carbon and carrier concentration in InGaP layers grown by chemical beam epitaxy
Bettini, J., de Carvalho, M.M.G., Pudenzi, M.A.A., Laureto, E., Meneses, E.A.
Published in Thin solid films (01.04.2003)
Published in Thin solid films (01.04.2003)
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Journal Article
Pulsed laser crystallization and structuring of a-Ge on GaAs
Santos, Paulo V, Zanatta, A.R, Dondeo, F, Trampert, A, Jahn, U, Comedi, D, Pudenzi, M.A.A, Chambouleyron, I
Published in Journal of non-crystalline solids (2002)
Published in Journal of non-crystalline solids (2002)
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Analysis of Be doping of InGaP lattice matched to GaAs
Bettini, J, de Carvalho, M.M.G, Cotta, M.A, Pudenzi, M.A.A, Frateschi, N.C, Silva Filho, A, Cardoso, L.P, Landers, R
Published in Journal of crystal growth (2000)
Published in Journal of crystal growth (2000)
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