Anisotropic thermal conductivity of AlGaN/GaN superlattices
Filatova-Zalewska, A, Litwicki, Z, Moszak, K, Olszewski, W, Opo czy ska, K, Pucicki, D, Serafi czuk, J, Hommel, D, Je owski, A
Published in Nanotechnology (12.02.2021)
Published in Nanotechnology (12.02.2021)
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Journal Article
Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers
Gabás, M, Ochoa-Martínez, E, Bielak, K, Pucicki, D, Lombardero, I, Barrutia, L, Fuertes-Marrón, D, Ochoa, M, García, I, Yoon, S F, Loke, W K, Wickasono, S, Tan, K H, Johnson, A D, Davies, J I, Algora, C
Published in Semiconductor science and technology (01.11.2020)
Published in Semiconductor science and technology (01.11.2020)
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Journal Article
Anisotropy of strain relaxation in heterogeneous GaInNAs layers grown by AP-MOVPE
Gelczuk, Ł., Pucicki, D., Serafińczuk, J., Dąbrowska-Szata, M., Dłużewski, P.
Published in Journal of crystal growth (15.11.2015)
Published in Journal of crystal growth (15.11.2015)
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Journal Article
Determination of composition of non-homogeneous GaInNAs layers
Pucicki, D., Bielak, K., Ściana, B., Radziewicz, D., Latkowska-Baranowska, M., Kováč, J., Vincze, A., Tłaczała, M.
Published in Journal of crystal growth (01.01.2016)
Published in Journal of crystal growth (01.01.2016)
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Journal Article
Optical Properties of Active Regions in Terahertz Quantum Cascade Lasers
Dyksik, M., Motyka, M., Rudno-Rudziński, W., Sęk, G., Misiewicz, J., Pucicki, D., Kosiel, K., Sankowska, I., Kubacka-Traczyk, J., Bugajski, M.
Published in Journal of infrared, millimeter and terahertz waves (01.07.2016)
Published in Journal of infrared, millimeter and terahertz waves (01.07.2016)
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Journal Article
GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications
Bisping, D., Pucicki, D., Fischer, M., Koeth, J., Zimmermann, C., Weinmann, P., Hofling, S., Kamp, M., Forchel, A.
Published in IEEE journal of selected topics in quantum electronics (01.05.2009)
Published in IEEE journal of selected topics in quantum electronics (01.05.2009)
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Journal Article
High-Temperature High-Power Operation of GaInNAs Laser Diodes in the 1220-1240-nm Wavelength Range
Bisping, D., Pucicki, D., Hofling, S., Habermann, S., Ewert, D., Fischer, M., Koeth, J., Forchel, A.
Published in IEEE photonics technology letters (01.11.2008)
Published in IEEE photonics technology letters (01.11.2008)
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Journal Article
APMOVPE growth and characterisation of undoped GaAsN/GaAs heterostructures
Ściana, B., Pucicki, D., Radziewicz, D., Serafińczuk, J., Kozłowski, J., Paszkiewicz, B., Tłaczała, M., Poloczek, P., Sęk, G., Misiewicz, J.
Published in Vacuum (12.12.2007)
Published in Vacuum (12.12.2007)
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Journal Article
Verification of threading dislocations density estimation methods suitable for efficient structural characterization of Al x Ga1− x N/GaN heterostructures grown by MOVPE
Moszak, K., Olszewski, W., Pucicki, D., Serafińczuk, J., Opołczyńska, K., Rudziński, M., Kudrawiec, R., Hommel, D.
Published in Journal of applied physics (28.10.2019)
Published in Journal of applied physics (28.10.2019)
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Journal Article
Defect characterizations of N-rich GaNAs ternary alloys
Grodzicki, M., Liedke, M.O., Moszak, K., Olszewski, W., Pawlaczyk, Ł., Majchrzak, D., Idczak, R., Pucicki, D., Serafińczuk, J., Butterling, M., Hirschmann, E., Wagner, A., Kudrawiec, R., Hommel, D.
Published in Vacuum (01.11.2024)
Published in Vacuum (01.11.2024)
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Journal Article
Verification of threading dislocations density estimation methods suitable for efficient structural characterization of AlxGa1−xN/GaN heterostructures grown by MOVPE
Moszak, K., Olszewski, W., Pucicki, D., Serafińczuk, J., Opołczyńska, K., Rudziński, M., Kudrawiec, R., Hommel, D.
Published in Journal of applied physics (28.10.2019)
Published in Journal of applied physics (28.10.2019)
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Journal Article
Growth and properties of the GaN cap layer strongly influenced by the composition of the underlying AlGaN
Moszak, K., Pucicki, D., Grodzicki, M., Olszewski, W., Majchrzak, D., Serafińczuk, J., Gorantla, S., Hommel, D.
Published in Materials science in semiconductor processing (01.12.2021)
Published in Materials science in semiconductor processing (01.12.2021)
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Journal Article
Modulated Ammonia Flow - Low Temperature AlN Buffer LP-MOVPE Growth for High Quality AlGaN Layers
Moszak, K., Pucicki, D., Olszewski, W., Majchrzak, D., Serafińczuk, J., Hommel, D.
Published in Acta physica Polonica, A (01.10.2019)
Published in Acta physica Polonica, A (01.10.2019)
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Journal Article
LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications
Ściana, B., Badura, M., Dawidowski, W., Bielak, K., Radziewicz, D., Pucicki, D., Szyszka, A., Żelazna, K., Tłaczała, M.
Published in Opto-electronics review (01.06.2016)
Published in Opto-electronics review (01.06.2016)
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