Silicon nanocrystal based memory devices for NVM and DRAM applications
Rao, R.A, Steimle, R.F, Sadd, M, Swift, C.T, Hradsky, B, Straub, S, Merchant, T, Stoker, M, Anderson, S.G.H, Rossow, M, Yater, J, Acred, B, Harber, K, Prinz, E.J, White, B.E, Muralidhar, R
Published in Solid-state electronics (01.09.2004)
Published in Solid-state electronics (01.09.2004)
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Journal Article
Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays
Rao, R.A., Gasquet, H.P., Steimle, R.F., Rinkenberger, G., Straub, S., Muralidhar, R., Anderson, S.G.H., Yater, J.A., Ledezma, J.C., Hamilton, J., Acred, B., Swift, C.T., Hradsky, B., Peschke, J., Sadd, M., Prinz, E.J., Chang, K.M., White, B.E.
Published in Solid-state electronics (01.11.2005)
Published in Solid-state electronics (01.11.2005)
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Conference Proceeding
The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
Prinz, E.J., Garone, P.M., Schwartz, P.V., Xiao, X., Sturm, J.C.
Published in IEEE electron device letters (01.02.1991)
Published in IEEE electron device letters (01.02.1991)
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Journal Article
Silicon nanocrystal non-volatile memory for embedded memory scaling
Steimle, R.F., Muralidhar, R., Rao, R., Sadd, M., Swift, C.T., Yater, J., Hradsky, B., Straub, S., Gasquet, H., Vishnubhotla, L., Prinz, E.J., Merchant, T., Acred, B., Chang, K., White, B.E.
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Journal Article
Conference Proceeding
A model for the channel potential of charge-trapping memories and its implications for device scaling
Sadd, M., Anderson, S.G.H., Hradsky, B., Muralidhar, R., Prinz, E.J., Rao, R., Straub, S., Steimle, R.F., Swift, C.T., White, B.E., Yater, J.A.
Published in Solid-state electronics (01.11.2005)
Published in Solid-state electronics (01.11.2005)
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Journal Article
Conference Proceeding
Nanocrystal physical attributes influencing non-volatile memory performance
Hradsky, B., Muralidhar, R., Rao, R.A., Steimle, B., Straub, S., White, B.E., Sadd, M., Anderson, S.G.H., Yater, J.A., Swift, C.T., Acred, B., Peschke, J., Prinz, E.J., Chang, K.M.
Published in 63rd Device Research Conference Digest, 2005. DRC '05 (2005)
Published in 63rd Device Research Conference Digest, 2005. DRC '05 (2005)
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Conference Proceeding
An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase
Swift, C.T., Chindalore, G.L., Harber, K., Harp, T.S., Hoefler, A., Hong, C.M., Ingersoll, P.A., Li, C.B., Prinz, E.J., Yater, J.A.
Published in Digest. International Electron Devices Meeting (2002)
Published in Digest. International Electron Devices Meeting (2002)
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Conference Proceeding
A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic
Prinz, E.J., Xiao, X., Schwartz, P.V., Sturm, J.C.
Published in IEEE transactions on electron devices (01.11.1992)
Published in IEEE transactions on electron devices (01.11.1992)
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Journal Article
A 90nm Embedded 2-Bit Per Cell Nanocrystal Flash EEPROM
Prinz, E.J., Yater, J., Steimle, R., Sadd, M., Swift, C., Ko-Min Chang
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)
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Conference Proceeding
A Novel Double Base Heterojunction Bipolar Transistor for Low Temperature Bipolar Logic
Prinz, E.J., Xiadong Xiao, Schwartz, P.V., Sturm, J.C.
Published in 50th Annual Device Research Conference (1992)
Published in 50th Annual Device Research Conference (1992)
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Conference Proceeding