Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays
Rao, R.A., Gasquet, H.P., Steimle, R.F., Rinkenberger, G., Straub, S., Muralidhar, R., Anderson, S.G.H., Yater, J.A., Ledezma, J.C., Hamilton, J., Acred, B., Swift, C.T., Hradsky, B., Peschke, J., Sadd, M., Prinz, E.J., Chang, K.M., White, B.E.
Published in Solid-state electronics (01.11.2005)
Published in Solid-state electronics (01.11.2005)
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Conference Proceeding
A model for the channel potential of charge-trapping memories and its implications for device scaling
Sadd, M., Anderson, S.G.H., Hradsky, B., Muralidhar, R., Prinz, E.J., Rao, R., Straub, S., Steimle, R.F., Swift, C.T., White, B.E., Yater, J.A.
Published in Solid-state electronics (01.11.2005)
Published in Solid-state electronics (01.11.2005)
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Conference Proceeding
Silicon nanocrystal non-volatile memory for embedded memory scaling
Steimle, R.F., Muralidhar, R., Rao, R., Sadd, M., Swift, C.T., Yater, J., Hradsky, B., Straub, S., Gasquet, H., Vishnubhotla, L., Prinz, E.J., Merchant, T., Acred, B., Chang, K., White, B.E.
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Conference Proceeding
Silicon nanocrystal based memory devices for NVM and DRAM applications
Rao, R.A, Steimle, R.F, Sadd, M, Swift, C.T, Hradsky, B, Straub, S, Merchant, T, Stoker, M, Anderson, S.G.H, Rossow, M, Yater, J, Acred, B, Harber, K, Prinz, E.J, White, B.E, Muralidhar, R
Published in Solid-state electronics (01.09.2004)
Published in Solid-state electronics (01.09.2004)
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An embedded 90nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase
SWIFT, C. T, CHINDALORE, G. L, HARBER, K, HARP, T. S, HOEFLER, A, HONG, C. M, INGERSOLL, P. A, LI, C. B, PRINZ, E. J, YATER, J. A
Year of Publication 2002
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Year of Publication 2002
Conference Proceeding
An embedded silicon nanocrystal nonvolatile memory for the 90nm technology node operating at 6V
Muralidhar, R., Steimle, R.F., Sadd, M., Rao, R., Swift, C.T., Prinz, E.J., Yater, J., Grieve, L., Harber, K., Hradsky, B., Straub, S., Acred, B., Paulson, W., Chen, W., Parker, L., Anderson, S.G.H., Rossow, M., Merchant, T., Paransky, M., Huynh, T., Hadad, D., Ko-Min Chang, White, B.E.
Published in 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) (2004)
Published in 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) (2004)
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Conference Proceeding
Nanocrystal physical attributes influencing non-volatile memory performance
Hradsky, B., Muralidhar, R., Rao, R.A., Steimle, B., Straub, S., White, B.E., Sadd, M., Anderson, S.G.H., Yater, J.A., Swift, C.T., Acred, B., Peschke, J., Prinz, E.J., Chang, K.M.
Published in 63rd Device Research Conference Digest, 2005. DRC '05 (2005)
Published in 63rd Device Research Conference Digest, 2005. DRC '05 (2005)
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Conference Proceeding
An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase
Swift, C.T., Chindalore, G.L., Harber, K., Harp, T.S., Hoefler, A., Hong, C.M., Ingersoll, P.A., Li, C.B., Prinz, E.J., Yater, J.A.
Published in Digest. International Electron Devices Meeting (2002)
Published in Digest. International Electron Devices Meeting (2002)
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Conference Proceeding
A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic
Prinz, E.J., Xiao, X., Schwartz, P.V., Sturm, J.C.
Published in IEEE transactions on electron devices (01.11.1992)
Published in IEEE transactions on electron devices (01.11.1992)
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