A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET
Zelsacher, R., Wood, A.C.G., Bacher, E., Prax, E., Sorschag, K., Krumrey, J., Baumgartl, J.
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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