Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap
Collaert, N., Alian, A., Arimura, H., Boccardi, G., Eneman, G., Franco, J., Ivanov, Ts, Lin, D., Loo, R., Merckling, C., Mitard, J., Pourghaderi, M.A., Rooyackers, R., Sioncke, S., Sun, J.W., Vandooren, A., Veloso, A., Verhulst, A., Waldron, N., Witters, L., Zhou, D., Barla, K., Thean, A.V.-Y.
Published in Microelectronic engineering (25.01.2015)
Published in Microelectronic engineering (25.01.2015)
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Journal Article
A new method to calculate leakage current and its applications for sub-45nm MOSFETs
Lujan, G.S., Magnus, W., Soree, B., Pourghaderi, M.A., Veloso, A., van Da, M.J.H., Lauwers, A., Kubicek, S., De Gendt, S., Heyns, M., De Meyer, K.
Published in Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 (2005)
Published in Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 (2005)
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Conference Proceeding
BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs
Franco, J., Kaczer, B., Roussel, J., Cho, M., Grasser, T., Mitard, J., Arimura, H., Witters, L., Cott, D., Waldron, N., Zhou, D., Vais, A., Lin, D., Alian, A., Pourghaderi, M. A., Martens, K., Sioncke, S., Collaert, N., Thean, A., Heyns, M., Groeseneken, G.
Published in 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) (01.10.2014)
Published in 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) (01.10.2014)
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Conference Proceeding
Theoretical Limit of TiSi2 Contact Resistance : Note: Sub-titles are not captured in Xplore and should not be used
Jeong, M. Y., Pourghaderi, M. A., Vuttivorakulchai, K., Song, S., Kim, Y.-S., Voros, M., Jin, S., Lee, B., Choi, W., Kwon, U., Kim, D. S.
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
Published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (27.09.2023)
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Conference Proceeding
RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
Franco, J., Kaczer, B., Waldron, N., Roussel, J., Alian, A., Pourghaderi, M. A., Ji, Z., Grasser, T., Kauerauf, T., Sioncke, S., Collaert, N., Thean, A., Groeseneken, G.
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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Conference Proceeding
Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit
Meuris, Marc M., Martens, K., De Jaegar, B., Van Steenbergen, J., Bonzom, Renaud, Caymax, Matty R., Houssa, M., Kaczer, Ben, Leys, Frederik, Nelis, Daniel, Opsomer, Karl, Pourghaderi, A. M., Satta, A., Simoen, Eddy R., Terzieva, Valentina, Souriau, Laurent, Bellenger, F., Brammertz, Guy, Nicholas, G., Scarozza, M., Huyghebaert, C., Winderickx, Gillis, Loo, Roger, Clarysse, Trudo, Conard, Thierry, Bender, Hugo, Benedetti, Alessandro, Todi, R., Delabie, A., Hellin, David, Van Daele, Benny, Sioncke, Sonja, Mertens, Paul W., De Meyer, Krtistien, Van Elshocht, Sven, Vandervorst, Wilfried, Zimmerman, Paul, Brunco, David P., Heyns, Marc M.
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article