Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors
Potyraj, P.A., Chen, D.-L., Hatalis, M.K., Greve, D.W.
Published in IEEE transactions on electron devices (01.08.1988)
Published in IEEE transactions on electron devices (01.08.1988)
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Journal Article
A 230-Watt S-band SiGe heterojunction bipolar transistor
Potyraj, P.A., Petrosky, K.J., Hobart, K.D., Kub, F.J., Thompson, P.E.
Published in IEEE transactions on microwave theory and techniques (01.12.1996)
Published in IEEE transactions on microwave theory and techniques (01.12.1996)
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Journal Article
A 230 watt S-band SiGe HBT
Potyraj, P.A., Petrosky, K.J., Hobart, K.D., Kub, F.J., Thompson, P.E.
Published in 1996 IEEE MTT-S International Microwave Symposium Digest (1996)
Published in 1996 IEEE MTT-S International Microwave Symposium Digest (1996)
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Conference Proceeding
Very high power S-band SiGe heterojunction bipolar transistors
Hobart, K.D., Kub, F.J., Thompson, P.E., Potyraj, P.A., Petrosky, K.J.
Published in 1996 54th Annual Device Research Conference Digest (1996)
Published in 1996 54th Annual Device Research Conference Digest (1996)
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Conference Proceeding