Gate Reliability of p-GaN HEMT With Gate Metal Retraction
Tallarico, A. N., Stoffels, S., Posthuma, N., Bakeroot, B., Decoutere, S., Sangiorgi, E., Fiegna, C.
Published in IEEE transactions on electron devices (01.11.2019)
Published in IEEE transactions on electron devices (01.11.2019)
Get full text
Journal Article
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
Millesimo, M., Fiegna, C., Posthuma, N., Borga, M., Bakeroot, B., Decoutere, S., Tallarico, A. N.
Published in IEEE transactions on electron devices (01.11.2021)
Published in IEEE transactions on electron devices (01.11.2021)
Get full text
Journal Article
Role of the GaN-on-Si Epi-Stack on Δ R ON Caused by Back-Gating Stress
Millesimo, M., Borga, M., Valentini, L., Bakeroot, B., Posthuma, N., Vohra, A., Decoutere, S., Fiegna, C., Tallarico, A. N.
Published in IEEE transactions on electron devices (01.10.2023)
Published in IEEE transactions on electron devices (01.10.2023)
Get full text
Journal Article
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
Millesimo, M., Borga, M., Bakeroot, B., Posthuma, N., Decoutere, S., Sangiorgi, E., Fiegna, C., Tallarico, A. N.
Published in IEEE electron device letters (01.11.2022)
Published in IEEE electron device letters (01.11.2022)
Get full text
Journal Article
1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates
Kumar, S., Geens, K., Vohra, A., Wellekens, D., Cingu, D., Fabris, E., Cosnier, T., Hahn, H., Bakeroot, B., Posthuma, N., Langer, R., Decoutere, S.
Published in IEEE electron device letters (01.04.2024)
Published in IEEE electron device letters (01.04.2024)
Get full text
Journal Article
TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs
Tallarico, A. N., Millesimo, M., Bakeroot, B., Borga, M., Posthuma, N., Decoutere, S., Sangiorgi, E., Fiegna, C.
Published in IEEE transactions on electron devices (01.02.2022)
Published in IEEE transactions on electron devices (01.02.2022)
Get full text
Journal Article
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices
Modolo, N., De Santi, C., Baratella, G., Bettini, A., Borga, M., Posthuma, N., Bakeroot, B., You, S., Decoutere, S., Bevilacqua, A., Neviani, A., Meneghesso, G., Zanoni, E., Meneghini, M.
Published in IEEE transactions on electron devices (01.08.2022)
Published in IEEE transactions on electron devices (01.08.2022)
Get full text
Journal Article
Cost-efficient thermophotovoltaic cells based on germanium substrates
van der Heide, J., Posthuma, N.E., Flamand, G., Geens, W., Poortmans, J.
Published in Solar energy materials and solar cells (01.10.2009)
Published in Solar energy materials and solar cells (01.10.2009)
Get full text
Journal Article
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate
Millesimo, M., Fiegna, C., Bakeroot, B., Borga, M., Posthuma, N., Decoutere, S., Sangiorgi, E., Tallarico, A. N.
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Get full text
Conference Proceeding
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
Millesimo, M., Bakeroot, B., Borga, M., Posthuma, N., Decoutere, S., Sangiorgi, E., Fiegna, C., Tallarico, A. N.
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Get full text
Conference Proceeding
Surface passivation for germanium photovoltaic cells
Posthuma, N.E., Flamand, G., Geens, W., Poortmans, J.
Published in Solar energy materials and solar cells (01.06.2005)
Published in Solar energy materials and solar cells (01.06.2005)
Get full text
Journal Article
Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance
Posthuma, N. E., You, S., Liang, H., Ronchi, N., Kang, X., Wellekens, D., Saripalli, Y. N., Decoutere, S.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Get full text
Conference Proceeding
Journal Article
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications
Fabris, E., Borga, M., Posthuma, N., Zhao, M., De Jaeger, B., You, S., Decoutere, S., Meneghini, M., Meneghesso, G., Zanoni, E.
Published in 2021 IEEE International Reliability Physics Symposium (IRPS) (01.03.2021)
Published in 2021 IEEE International Reliability Physics Symposium (IRPS) (01.03.2021)
Get full text
Conference Proceeding
Studies of implanted boron emitters for solar cell applications
Pawlak, B. J., Janssens, T., Singh, S., Kuzma-Filipek, I., Robbelein, J., Posthuma, N. E., Poortmans, J., Cristiano, F., Bazizi, E. M.
Published in Progress in photovoltaics (01.01.2012)
Published in Progress in photovoltaics (01.01.2012)
Get full text
Journal Article
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal–oxide semiconductor compatible process
Stoffels, S., Geens, K., Li, X., Wellekens, D., You, S., Zhao, M., Borga, M., Zanoni, E., Meneghesso, G., Meneghini, M., Posthuma, N.E., Van Hove, M., Decoutere, S.
Published in MRS communications (01.12.2018)
Published in MRS communications (01.12.2018)
Get full text
Journal Article
Another approach to form p+ emitter for rear junction n-type solar cells: Above 17.0% efficiency cells with CVD boron-doped epitaxial emitter
Gong, C., Van Nieuwenhuysen, K., Posthuma, N.E., Van Kerschaver, E., Poortmans, J.
Published in Solar energy materials and solar cells (2011)
Published in Solar energy materials and solar cells (2011)
Get full text
Journal Article
Conference Proceeding
GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion
Li, X., Stoffels, S., Bakeroot, B., Wellekens, D., Vanhove, B., Cosnier, T., Langer, R., Marcon, D., Groeseneken, G., Decoutere, S., Amirifar, N., Geens, K., Zhao, M., Guo, W., Liang, H., You, S., Posthuma, N., Jaeger, B. De
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Get full text
Conference Proceeding
Thin-Film Free-Standing Monocrystalline Si Solar Cells with Heterojunction Emitter
Solanki, C S, Carnel, L, Van Nieurwenhuysen, K, Ulyashin, A, Posthuma, N, Beaucarne, G, Poortmans, J
Published in Progress in photovoltaics (01.05.2005)
Published in Progress in photovoltaics (01.05.2005)
Get full text
Journal Article
Icodextrin instead of glucose during the daytime dwell in CCPD increases ultrafiltration and 24-h dialysate creatinine clearance
POSTHUMA, N, TER WEE, P. M, VERBRUGH, H. A, OE, P. L, PEERS, E, SAYERS, J, DONKER, A. J. M
Published in Nephrology, dialysis, transplantation (01.03.1997)
Published in Nephrology, dialysis, transplantation (01.03.1997)
Get full text
Journal Article
Ion implantation as a potential alternative for the formation of Front Surface Fields for IBC silicon solar cells
Aleman, M, Rosseel, E, Van Wichelen, K, Pawlak, B J, Janssens, T, Dross, F, Posthuma, N E, Poortmans, J
Published in 2010 35th IEEE Photovoltaic Specialists Conference (01.06.2010)
Published in 2010 35th IEEE Photovoltaic Specialists Conference (01.06.2010)
Get full text
Conference Proceeding