Nanocrystal Memory Cell Integration in a Stand-Alone 16-Mb nor Flash Device
Gerardi, C., Ancarani, V., Portoghese, R., Giuffrida, S., Bileci, M., Bimbo, G., Brafa, O., Mello, D., Ammendola, G., Tripiciano, E., Puglisi, R., Lombardo, S.A.
Published in IEEE transactions on electron devices (01.06.2007)
Published in IEEE transactions on electron devices (01.06.2007)
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Journal Article
Radiation Tolerance of Nanocrystal-Based Flash Memory Arrays Against Heavy Ion Irradiation
Cester, A., Wrachien, N., Gasperin, A., Paccagnella, A., Portoghese, R., Gerardi, C.
Published in IEEE transactions on nuclear science (01.12.2007)
Published in IEEE transactions on nuclear science (01.12.2007)
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Journal Article
Modeling of Heavy Ion Induced Charge Loss Mechanisms in Nanocrystal Memory Cells
Cester, A., Wrachien, N., Schwank, J.R., Vizkelethy, G., Portoghese, R., Gerardi, C.
Published in IEEE transactions on nuclear science (01.12.2008)
Published in IEEE transactions on nuclear science (01.12.2008)
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Journal Article
Readout drain current dependence of programming window in nanocrystal memory cells
WRACHIEN, N, AUTIZI, E, CESTER, A, PORTOGHESE, R, GERARDI, C
Published in Electronics letters (2008)
Published in Electronics letters (2008)
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Journal Article
Readout drain current dependence of programming window in nanocrystal memory cells
Wrachien, N, Autizi, E, Cester, A, Portoghese, R, Gerardi, C
Published in Electronics letters (13.03.2008)
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Published in Electronics letters (13.03.2008)
Journal Article
Nanocrystal Memory Cell Integration in a Stand-Alone 16-Mb @@inor@ Flash Device
Gerardi, C, Ancarani, V, Portoghese, R, Giuffrida, S, Bileci, M, Bimbo, G, Brafa, O, Mello, D, Ammendola, G, Tripiciano, E, Puglisi, R, Lombardo, S A
Published in IEEE transactions on electron devices (01.06.2007)
Published in IEEE transactions on electron devices (01.06.2007)
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Journal Article
Characterization of [formula omitted] heterojunction bipolar transistors formed by Ge ion implantation in Si
Lombardo, S., Raineri, V., Portoghese, R., Campisano, S.U., Pinto, A., La Rosa, G., Ward, P.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.1996)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.1996)
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Journal Article
Performance and reliability of a 4Mb Si nanocrystal NOR Flash memory with optimized 1T memory cells
Gerardi, C., Molas, G., Albini, G., Tripiciano, E., Gely, M., Emmi, A., Fiore, O., Nowak, E., Mello, D., Vecchio, M., Masarotto, L., Portoghese, R., De Salvo, B., Deleonibus, S., Maurelli, A.
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
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