Grain boundary-driven leakage path formation in HfO2 dielectrics
Bersuker, G., Yum, J., Vandelli, L., Padovani, A., Larcher, L., Iglesias, V., Porti, M., Nafría, M., McKenna, K., Shluger, A., Kirsch, P., Jammy, R.
Published in Solid-state electronics (01.11.2011)
Published in Solid-state electronics (01.11.2011)
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Grain boundary mediated leakage current in polycrystalline HfO2 films
MCKENNA, K, SHLUGER, A, IGLESIAS, V, PORTI, M, NAFRIA, M, LANZA, M, BERSUKER, G
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces
Lanza, M, Porti, M, Nafría, M, Aymerich, X, Whittaker, E, Hamilton, B
Published in Review of scientific instruments (01.10.2010)
Published in Review of scientific instruments (01.10.2010)
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Graphene-Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization
Lanza, M., Bayerl, A., Gao, T., Porti, M., Nafria, M., Jing, G. Y., Zhang, Y. F., Liu, Z. F., Duan, H. L.
Published in Advanced materials (Weinheim) (13.03.2013)
Published in Advanced materials (Weinheim) (13.03.2013)
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Combined nanoscale KPFM characterization and device simulation for the evaluation of the MOSFET variability related to metal gate workfunction fluctuations
Ruiz, A., Seoane, N., Claramunt, S., García-Loureiro, A., Porti, M., Nafria, M.
Published in Microelectronic engineering (15.08.2019)
Published in Microelectronic engineering (15.08.2019)
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Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements
Couso, C., Iglesias, V., Porti, M., Claramunt, S., Nafria, M., Domingo, N., Cordes, A., Bersuker, G.
Published in IEEE electron device letters (01.05.2016)
Published in IEEE electron device letters (01.05.2016)
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Efficient methodology to extract interface traps parameters for TCAD simulations
Couso, C., Martin-Martinez, J., Porti, M., Nafria, M., Aymerich, X.
Published in Microelectronic engineering (25.06.2017)
Published in Microelectronic engineering (25.06.2017)
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UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements
Lanza, M., Porti, M., Nafría, M., Aymerich, X., Whittaker, E., Hamilton, B.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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CAFM Experimental Considerations and Measurement Methodology for In-Line Monitoring and Quantitative Analysis of III–V Materials Defects
Porti, M., Iglesias, V., Wu, Q., Couso, C., Claramunt, S., Nafria, M., Cordes, A., Bersuker, G.
Published in IEEE transactions on nanotechnology (01.11.2016)
Published in IEEE transactions on nanotechnology (01.11.2016)
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Nanoscale conductive pattern of the homoepitaxial AlGaN GaN transistor
Pérez-Tomás, A, Catalàn, G, Fontserè, A, Iglesias, V, Chen, H, Gammon, P M, Jennings, M R, Thomas, M, Fisher, C A, Sharma, Y K, Placidi, M, Chmielowska, M, Chenot, S, Porti, M, Nafría, M, Cordier, Y
Published in Nanotechnology (20.03.2015)
Published in Nanotechnology (20.03.2015)
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Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
Fontserè, A, Pérez-Tomás, A, Placidi, M, Llobet, J, Baron, N, Chenot, S, Cordier, Y, Moreno, J C, Jennings, M R, Gammon, P M, Fisher, C A, Iglesias, V, Porti, M, Bayerl, A, Lanza, M, Nafría, M
Published in Nanotechnology (05.10.2012)
Published in Nanotechnology (05.10.2012)
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Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures
Iglesias, V., Lanza, M., Bayerl, A., Porti, M., Nafría, M., Aymerich, X., Liu, L.F., Kang, J.F., Bersuker, G., Zhang, K., Shen, Z.Y.
Published in Microelectronics and reliability (01.09.2012)
Published in Microelectronics and reliability (01.09.2012)
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Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with enhanced CAFM
AGUILERA, L, PORTI, M, NAFRIA, M, AYMERICH, X
Published in IEEE electron device letters (01.03.2006)
Published in IEEE electron device letters (01.03.2006)
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Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices
LANZA, M, PORTI, M, MICHALOWSKI, P, NAFRIA, M, AYMERICH, X, BENSTETTER, G, LODERMEIER, E, RANZINGER, H, JASCHKE, G, TEICHERT, S, WILDE, L
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study
BAYERL, A, LANZA, M, PORTI, M, CAMPABADAL, F, NAFRIA, M, AYMERICH, X, BENSTETTER, G
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale
LANZA, M, PORTI, M, NAFRIA, M, AYMERICH, X, GHIDINI, G, SEBASTIANI, A
Published in Microelectronics and reliability (01.09.2009)
Published in Microelectronics and reliability (01.09.2009)
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Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high- k stacks observed with CAFM
Lanza, M., Porti, M., Nafria, M., Benstetter, G., Frammelsberger, W., Ranzinger, H., Lodermeier, E., Jaschke, G.
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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