Epitaxial graphene on cubic SiC(111)Si(111) substrate
Ouerghi, A, Kahouli, A, Lucot, D, Portail, M, Travers, L, Gierak, J, Penuelas, J, Jegou, P, Shukla, A, Chassagne, T, Zielinski, M
Published in Applied physics letters (10.05.2010)
Published in Applied physics letters (10.05.2010)
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Journal Article
Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide
Lafont, F, Ribeiro-Palau, R, Kazazis, D, Michon, A, Couturaud, O, Consejo, C, Chassagne, T, Zielinski, M, Portail, M, Jouault, B, Schopfer, F, Poirier, W
Published in Nature communications (20.04.2015)
Published in Nature communications (20.04.2015)
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Journal Article
Comparative study of vent and seep macrofaunal communities in the Guaymas Basin
Portail, M, Olu, K, Escobar-Briones, E, Caprais, J. C, Menot, L, Waeles, M, Cruaud, P, Sarradin, P. M, Godfroy, A, Sarrazin, J
Published in Biogeosciences (21.09.2015)
Published in Biogeosciences (21.09.2015)
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Journal Article
Optical properties of InxGa1−xN/GaN quantum-disks obtained by selective area sublimation
Damilano, B., Vézian, S., Portail, M., Alloing, B., Brault, J., Courville, A., Brändli, V., Leroux, M., Massies, J.
Published in Journal of crystal growth (01.11.2017)
Published in Journal of crystal growth (01.11.2017)
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Journal Article
Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy
Boubekri, R., Cambril, E., Couraud, L., Bernardi, L., Madouri, A., Portail, M., Chassagne, T., Moisson, C., Zielinski, M., Jiao, S., Michaud, J.-F., Alquier, D., Bouloc, J., Nony, L., Bocquet, F., Loppacher, C., Martrou, D., Gauthier, S.
Published in Journal of applied physics (07.08.2014)
Published in Journal of applied physics (07.08.2014)
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Journal Article
High temperature annealing and CVD growth of few‐layer graphene on bulk AlN and AlN templates
Dagher, R., Matta, S., Parret, R., Paillet, M., Jouault, B., Nguyen, L., Portail, M., Zielinski, M., Chassagne, T., Tanaka, S., Brault, J., Cordier, Y., Michon, A.
Published in Physica status solidi. A, Applications and materials science (01.04.2017)
Published in Physica status solidi. A, Applications and materials science (01.04.2017)
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Journal Article
Structural trends in Si dots formation on SiC surfaces using CVD environment
Portail, M., Vézian, S., Teisseire, M., Michon, A., Chassagne, T., Zielinski, M.
Published in Journal of crystal growth (15.10.2014)
Published in Journal of crystal growth (15.10.2014)
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Journal Article
Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC
Portail, M., Michon, A., Vézian, S., Lefebvre, D., Chenot, S., Roudon, E., Zielinski, M., Chassagne, T., Tiberj, A., Camassel, J., Cordier, Y.
Published in Journal of crystal growth (15.06.2012)
Published in Journal of crystal growth (15.06.2012)
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Journal Article
Elaboration of (1 1 1) oriented 3C–SiC/Si layers for template application in nitride epitaxy
Zielinski, M., Portail, M., Roy, S., Chassagne, T., Moisson, C., Kret, S., Cordier, Y.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25.11.2009)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25.11.2009)
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Journal Article
Strain and wafer curvature of 3C-SiC films on silicon: influence of the growth conditions
Zielinski, M., Ndiaye, S., Chassagne, T., Juillaguet, S., Lewandowska, R., Portail, M., Leycuras, A., Camassel, J.
Published in Physica status solidi. A, Applications and materials science (01.04.2007)
Published in Physica status solidi. A, Applications and materials science (01.04.2007)
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Journal Article
Conference Proceeding
Original 3C-SiC micro-structure on a 3C–SiC pseudo-substrate
Michaud, J.F., Portail, M., Chassagne, T., Zielinski, M., Alquier, D.
Published in Microelectronic engineering (01.05.2013)
Published in Microelectronic engineering (01.05.2013)
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Journal Article
A new approach for AFM cantilever elaboration with 3C-SiC
Jiao, S., Michaud, J.F., Portail, M., Madouri, A., Chassagne, T., Zielinski, M., Alquier, D.
Published in Materials letters (15.06.2012)
Published in Materials letters (15.06.2012)
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Journal Article
Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC
Song, X., Biscarrat, J., Michaud, J.-F., Cayrel, F., Zielinski, M., Chassagne, T., Portail, M., Collard, E., Alquier, D.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15.09.2011)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (15.09.2011)
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Journal Article
Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation
Bazin, A.E., Michaud, J.F., Autret-Lambert, C., Cayrel, F., Chassagne, T., Portail, M., Zielinski, M., Collard, E., Alquier, D.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25.07.2010)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25.07.2010)
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Journal Article
Highly sensitive determination of N + doping level in 3C–SiC and GaN epilayers by Fourier transform infrared spectroscopy
Portail, M., Zielinski, M., Chassagne, T., Chauveau, H., Roy, S., De Mierry, P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25.11.2009)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25.11.2009)
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Journal Article
Realization of AlGaN/GaN HEMTs on 3C-SiC/Si(111) substrates
Cordier, Y., Portail, M., Chenot, S., Tottereau, O., Zielinski, M., Chassagne, T.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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