Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides
Pompl, T., Kerber, A., Röhner, M., Kerber, M.
Published in Microelectronics and reliability (01.09.2006)
Published in Microelectronics and reliability (01.09.2006)
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Journal Article
Conference Proceeding
Highly accurate product-level aging monitoring in 40nm CMOS
Hofmann, K, Reisinger, H, Ermisch, K, Schlunder, C, Gustin, W, Pompl, T, Georgakos, G, Arnim, K v, Hatsch, J, Kodytek, T, Baumann, T, Pacha, C
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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Conference Proceeding
Soft breakdown and hard breakdown in ultra-thin oxides
Pompl, T., Engel, C., Wurzer, H., Kerber, M.
Published in Microelectronics and reliability (01.04.2001)
Published in Microelectronics and reliability (01.04.2001)
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Journal Article
Practical aspects of reliability analysis for IC designs
Pompl, T., Schlünder, C., Hommel, M., Nielen, H., Schneider, J.
Published in 2006 43rd ACM/IEEE Design Automation Conference (24.07.2006)
Published in 2006 43rd ACM/IEEE Design Automation Conference (24.07.2006)
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Conference Proceeding
Change of acceleration behavior of time-dependent dielectric breakdown by the BEOL process: indications for hydrogen induced transition in dominant degradation mechanism
Pompl, T., Allers, K.-H., Schwab, R., Hofmann, K., Roehner, M.
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
Published in 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual (2005)
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Conference Proceeding
Influence of gate oxide breakdown on MOSFET device operation
Pompl, T., Wurzer, H., Kerber, M., Eisele, I.
Published in Microelectronics and reliability (01.01.2000)
Published in Microelectronics and reliability (01.01.2000)
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Journal Article
Modeling of substrate related extrinsic oxide failure distributions
Pompl, T., Kerber, M., Innertsberger, G., Allers, K.-H., Obry, M., Krasemann, A., Temmler, D.
Published in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) (2002)
Published in 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) (2002)
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Conference Proceeding
Reliability aspects of gate oxide under ESD pulse stress
Ille, A., Stadler, W., Pompl, T., Gossner, H., Brodbeck, T., Esmark, K., Riess, P., Alvarez, D., Chatty, K., Gauthier, R., Bravaix, A.
Published in 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) (01.12.2009)
Published in 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) (01.12.2009)
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Conference Proceeding
Journal Article
65nm cmos technology for low power applications
Steegen, A., Mo, R., Mann, R., Sun, M.-C., Eller, M., Leake, G., Vietzke, D., Tilke, A., Guarin, F., Fischer, A., Pompl, T., Massey, G., Vayshenker, A., Tan, W.L., Ebert, A., Lin, W., Gao, W., Lian, J., Kim, J.-P., Wrschka, P., Yang, J.-H., Ajmera, A., Knoefler, R., Teh, Y.-W., Jamin, F., Park, J.E., Hooper, K., Griffin, C., Nguyen, P., Klee, V., Ku, V., Baiocco, C., Johnson, G., Tai, L., Benedict, J., Scheer, S., Zhuang, H., Ramanchandran, V., Matusiewicz, G., Lin, Y.-H., Siew, Y.K., Zhang, F., Leong, L.S., Liew, S.L., Park, K.C., Lee, K.-W., Hong, D.H., Choi, S.-M., Kaltalioglu, E., Kim, S.O., Naujok, M., Sherony, M., Cowley, A., Thomas, A., Sudijohno, J., Schiml, T., Ku, J.-H., Yang, I.
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
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Conference Proceeding
Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown
Kerber, A., Rohner, M., Pompl, T., Duschl, R., Kerber, M.
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
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Conference Proceeding
Ozone-enhanced molecular beam deposition of nickel oxide (NiO) for sensor applications
Neubecker, Alexandra, Pompl, Thomas, Doll, Theodor, Hansch, Walter, Eisele, Ignaz
Published in Thin solid films (21.11.1997)
Published in Thin solid films (21.11.1997)
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Journal Article
Failure distributions of successive dielectric breakdown events
Pompl, T., Kerber, M.
Published in IEEE transactions on device and materials reliability (01.06.2004)
Published in IEEE transactions on device and materials reliability (01.06.2004)
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Magazine Article
TDDB robustness of highly dense 65NM BEOL vertical natural capacitor with competitive area capacitance for RF and mixed-signal applications
Fischer, A.H., Lim, Y.K., Riess, P., Pompl, T., Zhang, B.C., Chua, E.C., Keller, W.W., Tan, J.B., Klee, V., Tan, Y.C., Souche, D., Sohn, D.K., von Glasow, A.
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
Published in 2008 IEEE International Reliability Physics Symposium (01.04.2008)
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Conference Proceeding
Contribution of interface traps to valence band electron tunneling in PMOS devices
Pompl, T., Kerber, M., Wurzer, H., Eisele, I.
Published in 30th European Solid-State Device Research Conference (2000)
Published in 30th European Solid-State Device Research Conference (2000)
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Conference Proceeding
Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric
Pompl, T., Mogul, H.C., Kerber, M., Haase, G., Ogawa, E., McPherson, J.W., Xiong, W., Schulz, T., Schrufer, K., Cleavelin, R.
Published in 2006 IEEE International Reliability Physics Symposium Proceedings (01.03.2006)
Published in 2006 IEEE International Reliability Physics Symposium Proceedings (01.03.2006)
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Conference Proceeding