Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures
EMTSEV, V. V, EHRHART, P, POLOSKIN, D. S, EMTSEV, K. V
Published in Journal of materials science. Materials in electronics (01.07.2007)
Published in Journal of materials science. Materials in electronics (01.07.2007)
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Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds
Shabunina, E. I., Chernyakov, A. E., Ivanov, A. E., Kartashova, A. P., Kuchinsky, V. I., Poloskin, D. S., Talnishnikh, N. A., Shmidt, N. M., Zakgeim, A. L.
Published in Journal of applied spectroscopy (01.03.2023)
Published in Journal of applied spectroscopy (01.03.2023)
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Correlation of mosaic-structure peculiarities with electric characteristics and surface multifractal parameters for GaN epitaxial layers
Shmidt, N M, Emtsev, V V, Kolmakov, A G, Kryzhanovsky, A D, Lundin, W V, Poloskin, D S, Ratnikov, V V, Titkov, A N, Usikov, A S, Zavarin, E E
Published in Nanotechnology (01.12.2001)
Published in Nanotechnology (01.12.2001)
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Conference Proceeding
Radiation-produced defects in germanium: Experimental data and models of defects
Emtsev, V. V., Kozlovski, V. V., Poloskin, D. S., Oganesyan, G. A.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2017)
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Analysis of integrated thyristor switching-off by a reverse gate pulse current
Grekhov, I. V., Lyublinsky, A. G., Mikhailov, E. M., Poloskin, D. S., Skidanov, A. A.
Published in Technical physics (01.11.2017)
Published in Technical physics (01.11.2017)
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Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System
Emtsev, V. V., Gushchina, E. V., Petrov, V. N., Tal’nishnih, N. A., Chernyakov, A. E., Shabunina, E. I., Shmidt, N. M., Usikov, A. S., Kartashova, A. P., Zybin, A. A., Kozlovski, V. V., Kudoyarov, M. F., Saharov, A. V., Oganesyan, A. G., Poloskin, D. S., Lundin, V. V.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2018)
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Journal Article
Defect production in heavily doped n-Si irradiated with fast electrons at cryogenic temperatures
Emtsev, V.V., Ehrhart, P., Emtsev, K.V., Poloskin, D.S., Dedek, U.
Published in Physica. B, Condensed matter (01.04.2006)
Published in Physica. B, Condensed matter (01.04.2006)
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Journal Article
Point defects in gamma-irradiated n-GaN
Emtsev, V V, Davydov, V Yu, Kozlovskii, V V, Lundin, V V, Poloskin, D S, Smirnov, A N, Shmidt, N M, Usikov, A S, Aderhold, J, Klausing, H, Mistele, D, Rotter, T, Stemmer, J, Semchinova, O, Graul, J
Published in Semiconductor science and technology (01.01.2000)
Published in Semiconductor science and technology (01.01.2000)
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Journal Article
Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
Emtsev, V. V., Zavarin, E. E., Kozlovskii, M. A., Kudoyarov, M. F., Lundin, V. V., Oganesyan, G. A., Petrov, V. N., Poloskin, D. S., Sakharov, A. V., Troshkov, S. I., Shmidt, N. M., V’yuginov, V. N., Zybin, A. A., Parnes, Ya. M., Vidyakin, S. I., Gudkov, A. G., Chernyakov, A. E., Kozlovskii, V. V.
Published in Technical physics letters (01.11.2016)
Published in Technical physics letters (01.11.2016)
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Journal Article
Electrically detected magnetic resonance of phosphorous due to spin dependent recombination with triplet centers in γ-irradiated silicon
Akhtar, W., Morishita, H., Vlasenko, L.S., Poloskin, D.S., Itoh, K.M.
Published in Physica. B, Condensed matter (15.12.2009)
Published in Physica. B, Condensed matter (15.12.2009)
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Journal Article
Conference Proceeding
Stress-induced changes of thermal donor formation in heat-treated Czochralski-grown silicon
Emtsev, V.V., Andreev, B.A., Davydov, V.Yu, Poloskin, D.S., Oganesyan, G.A., Kryzhkov, D.I., Shmagin, V.B., Emtsev, V.V., Misiuk, A., Londos, C.A.
Published in Physica. B, Condensed matter (31.12.2003)
Published in Physica. B, Condensed matter (31.12.2003)
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Dynamic nuclear polarization of (29)Si via spin S=1 centers in isotopically controlled silicon
Itahashi, T, Hayashi, H, Itoh, K M, Poloskin, D S, Vlasenko, L S, Vlasenko, M P
Published in Physica. B, Condensed matter (15.12.2009)
Published in Physica. B, Condensed matter (15.12.2009)
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Journal Article
Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation
Emtsev, V.V., Emtsev, V.V., Kozlovskii, V.V., Misiuk, A., Oganesyan, G.A., Poloskin, D.S., Sobolev, N.A., Tropp, E.A.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.03.2009)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.03.2009)
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Journal Article
Radiation-produced defects in n-GaN
Emtsev, V.V., Davydov, V.Yu, Kozlovskii, V.V., Oganesyan, G.A., Poloskin, D.S., Smirnov, A.N., Tropp, E.A., Morozov, Yu.G.
Published in Physica. B, Condensed matter (15.12.2007)
Published in Physica. B, Condensed matter (15.12.2007)
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