Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width
Coquand, R., Casse, M., Barraud, S., Cooper, D., Maffini-Alvaro, V., Samson, M., Monfray, S., Boeuf, F., Ghibaudo, G., Faynot, O., Poiroux, T.
Published in IEEE transactions on electron devices (01.02.2013)
Published in IEEE transactions on electron devices (01.02.2013)
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Journal Article
On the Variability in Planar FDSOI Technology: From MOSFETs to SRAM Cells
Mazurier, J., Weber, O., Andrieu, F., Toffoli, A., Rozeau, O., Poiroux, T., Allain, F., Perreau, P., Fenouillet-Beranger, C., Thomas, O., Belleville, M., Faynot, O.
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Journal Article
Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs
Poli, S., Pala, M.G., Poiroux, T., Deleonibus, S., Baccarani, G.
Published in IEEE transactions on electron devices (01.11.2008)
Published in IEEE transactions on electron devices (01.11.2008)
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Journal Article
Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs
Nuo Xu, Ho, Byron, Andrieu, F., Smith, L., Bich-Yen Nguyen, Weber, O., Poiroux, T., Faynot, O., Tsu-Jae King Liu
Published in IEEE electron device letters (01.03.2012)
Published in IEEE electron device letters (01.03.2012)
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Journal Article
Experimental Investigation on the Quasi-Ballistic Transport: Part I-Determination of a New Backscattering Coefficient Extraction Methodology
Barral, V., Poiroux, T., Saint-Martin, J., Munteanu, D., Autran, J.-L., Deleonibus, S.
Published in IEEE transactions on electron devices (01.03.2009)
Published in IEEE transactions on electron devices (01.03.2009)
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Journal Article
Impact of back biasing on carrier transport in ultra-thin-body and BOX (UTBB) Fully Depleted SOI MOSFETs
Nuo Xu, Andrieu, F., Ho, Byron, Bich-Yen Nguyen, Weber, O., Mazure, Carlos, Faynot, O., Poiroux, T., Tsu-Jae King Liu
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
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Conference Proceeding
On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature
Ghibaudo, G., Aouad, M., Casse, M., Martinie, S., Poiroux, T., Balestra, F.
Published in Solid-state electronics (01.08.2020)
Published in Solid-state electronics (01.08.2020)
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Journal Article
In-wafer variability in FD-SOI MOSFETs: detailed analysis and statistical modelling
Pradeep, Krishna, Scheer, Patrick, Poiroux, Thierry, Juge, André, Ghibaudo, Gérard
Published in Semiconductor science and technology (01.05.2020)
Published in Semiconductor science and technology (01.05.2020)
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Journal Article
Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
NOEL, Jean-Philippe, THOMAS, Olivier, ROZEAU, Olivier, BOEUF, Frédéric, FAYNOT, Olivier, AMARA, Amara, JAUD, Marie-Anne, WEBER, Olivier, POIROUX, Thierry, FENOUILLET-BERANGER, Claire, RIVALLIN, Pierrette, SCHEIBLIN, Pascal, ANDRIEU, François, VINET, Maud
Published in IEEE transactions on electron devices (2011)
Published in IEEE transactions on electron devices (2011)
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Journal Article
Multi- V T UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
Noel, Jean-Philippe, Thomas, Olivier, Jaud, Marie-Anne, Weber, Olivier, Poiroux, Thierry, Fenouillet-Beranger, Claire, Rivallin, Pierrette, Scheiblin, Pascal, Andrieu, Francois, Vinet, Maud, Rozeau, Olivier, Boeuf, Frederic, Faynot, Olivier, Amara, Amara
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Journal Article
Experimental gm/ID Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, André, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article
Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies-Part II: DC and AC Model Description
Poiroux, Thierry, Rozeau, O., Scheer, Patrick, Martinie, Sebastien, Jaud, Marie-Anne, Minondo, M., Juge, Andre, Barbe, J. C., Vinet, Maud
Published in IEEE transactions on electron devices (01.09.2015)
Published in IEEE transactions on electron devices (01.09.2015)
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Journal Article
Experimental /} Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET
El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, Andre, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Published in IEEE transactions on electron devices (01.01.2018)
Published in IEEE transactions on electron devices (01.01.2018)
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Journal Article
Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs
Theodorou, Christoforos G., Ioannidis, Eleftherios G., Andrieu, Francois, Poiroux, Thierry, Faynot, Olivier, Dimitriadis, Charalabos A., Ghibaudo, Gerard
Published in IEEE transactions on electron devices (01.04.2014)
Published in IEEE transactions on electron devices (01.04.2014)
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Journal Article
Total Ionizing Dose Effects in FDSOI Compact Model for IC Design
Rostand, N., Martinie, S., Gaillardin, M., Marcandella, C., Rozeau, O., Lacord, J., Barbe, J.-C., Poiroux, T., Hubert, G.
Published in IEEE transactions on nuclear science (01.07.2019)
Published in IEEE transactions on nuclear science (01.07.2019)
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Journal Article
Single Event Transient Compact Model for FDSOI MOSFETs Taking Bipolar Amplification and Circuit Level Arbitrary Generation Into Account
Rostand, Neil, Martinie, Sebastien, Lacord, Joris, Rozeau, Olivier, Poiroux, Thierry, Hubert, Guillaume
Published in 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2019)
Published in 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2019)
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Conference Proceeding
L-UTSOI: A compact model for low-power analog and digital applications in FDSOI technology
Martinie, Sebastien, Rozeau, Olivier, Poiroux, Thierry, Scheer, Patrick, Ghouli, Salim El, Kang, Mihyun, Juge, Andre, Lee, Harrison
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
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Conference Proceeding
MOS-like approach for compact modeling of High-Electron-Mobility Transistor
Vaysset, Adrien, Martinie, Sebastien, Triozon, Francois, Rozeau, Olivier, Jaud, Marie-Anne, Escoffier, Rene, Poiroux, Thierry
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
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Conference Proceeding