Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH3
Pogorel’skii, M. Yu, Alekseev, A. N., Pogorel’skii, Yu. V., Shkurko, A. P.
Published in Technical physics letters (01.09.2015)
Published in Technical physics letters (01.09.2015)
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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.
Published in Technical physics letters (01.04.2008)
Published in Technical physics letters (01.04.2008)
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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Kokin, S. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Chalyĭ, V. P., Shkurko, A. P.
Published in Technical physics letters (01.08.2008)
Published in Technical physics letters (01.08.2008)
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Journal Article
GaN/InGaN heterostructures grown by ammonia MBE with a wetting metal indium layer
Alekseev, A. N., Byrnaz, A. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyĭ, V. P., Shkurko, A. P.
Published in Technical physics letters (01.09.2008)
Published in Technical physics letters (01.09.2008)
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Journal Article
Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE
Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Veretekha, A. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.
Published in Technical physics letters (01.11.2006)
Published in Technical physics letters (01.11.2006)
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Journal Article
Microwave field-effect transistors based on group-III nitrides
Aleksandrov, S. B., Baranov, D. A., Kaidash, A. P., Krasovitskii, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skii, Yu. V., Sokolov, I. A., Stepanov, M. V., Chalyi, V. P., Gladysheva, N. B., Dorofeev, A. A., Matveev, Yu. A., Chernyavskii, A. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
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AlGaN/GaN HEMTs grown by ammonia MBE
Volkov, V. V., Ivanova, V. P., Kuz’michev, Yu. S., Lermontov, S. A., Solov’ev, Yu. V., Baranov, D. A., Kaidash, A. P., Krasovitskii, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skii, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyi, V. P.
Published in Technical physics letters (01.05.2004)
Published in Technical physics letters (01.05.2004)
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High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures
Aleksandrov, S. B., Alekseev, A. N., Demidov, D. M., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Pogorel’skii, Yu. V., Ter-Martirosyan, A. L., Sokolov, É. G., Chaly, V. P., Shkurko, A. P.
Published in Technical physics letters (01.08.2002)
Published in Technical physics letters (01.08.2002)
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Instability of III–V compound surfaces due to liquid phase formation
Karpov, S.Yu, Kovalchuk, Yu.V., Myachin, V.E., Pogorelskii, Yu.V.
Published in Journal of crystal growth (01.04.1993)
Published in Journal of crystal growth (01.04.1993)
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MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen
Petrov, S. I., Kaidash, A. P., Krasovitskii, D. M., Sokolov, I. A., Pogorel’skii, Yu. V., Chalyi, V. P., Shkurko, A. P., Stepanov, M. V., Pavlenko, M. V., Baranov, D. A.
Published in Technical physics letters (01.07.2004)
Published in Technical physics letters (01.07.2004)
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