Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors
Smith, N., Berens, J., Pobegen, G., Grasser, T., Shluger, A.
Published in Journal of applied physics (28.08.2024)
Published in Journal of applied physics (28.08.2024)
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Journal Article
Photon-assisted electron depopulation of 4H-SiC/SiO2 interface states in n-channel 4H-SiC metal–oxide–semiconductor field effect transistors
Weger, M., Kuegler, J., Nelhiebel, M., Moser, M., Bockstedte, M., Pobegen, G.
Published in Journal of applied physics (21.07.2024)
Published in Journal of applied physics (21.07.2024)
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Journal Article
Barrier height tuning by inverse sputter etching at poly-Si/4H-SiC heterojunction diodes
Triendl, F, Pfusterschmied, G, Schwarz, S, Pobegen, G, Konrath, J P, Schmid, U
Published in Semiconductor science and technology (01.05.2021)
Published in Semiconductor science and technology (01.05.2021)
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Journal Article
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs
Grasser, T., Feil, M., Waschneck, K., Reisinger, H., Berens, J., Waldhoer, D., Vasilev, A., Waltl, M., Aichinger, T., Bockstedte, M., Gustin, W., Pobegen, G.
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
Similarities and Differences of BTI in SiC and Si Power MOSFETs
Berens, J., Weger, M., Pobegen, G., Aichinger, T., Rescher, G., Schleich, C., Grasser, T.
Published in 2020 IEEE International Reliability Physics Symposium (IRPS) (01.04.2020)
Published in 2020 IEEE International Reliability Physics Symposium (IRPS) (01.04.2020)
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Conference Proceeding
The 'permanent' component of NBTI: Composition and annealing
Grasser, T, Aichinger, T, Pobegen, G, Reisinger, H, Wagner, P, Franco, J, Nelhiebel, M, Kaczer, B
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
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Conference Proceeding
Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs
Schleich, C., Berens, J., Rzepa, G., Pobegen, G., Rescher, G., Tyaginov, S., Grasser, T., Waltl, M.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes
Grasser, T., Waltl, M., Wimmer, Y., Goes, W., Kosik, R., Rzepa, G., Reisinger, H., Pobegen, G., El-Sayed, A., Shluger, A., Kaczer, B.
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Stress and Recovery Dynamics of Drain Current in GaN HD-GITs Submitted to DC Semi-ON stress
Padovan, V., Koller, C., Pobegen, G., Ostermaier, C., Pogany, D.
Published in Microelectronics and reliability (01.09.2019)
Published in Microelectronics and reliability (01.09.2019)
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Journal Article
Modelling the interactions and diffusion of NO in amorphous SiO 2
Mistry, M V, Cottom, J, Patel, K, Shluger, A L, Sosso, G C, Pobegen, G
Published in Modelling and simulation in materials science and engineering (01.04.2021)
Published in Modelling and simulation in materials science and engineering (01.04.2021)
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Journal Article
Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI
Grasser, T., Rott, K., Reisinger, H., Waltl, M., Wagner, P., Schanovsky, F., Goes, W., Pobegen, G., Kaczer, B.
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Journal Article
Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations
Schleich, Christian, Pobegen, Gregor, Feil, Maximilian Wolfgang, Waltl, Michael, Rzepa, Gerhard, Vasilev, Aleksandr, Grasser, Tibor, Stampfer, Bernhard
Published in Materials science forum (31.05.2023)
Published in Materials science forum (31.05.2023)
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Journal Article
Quantitative investigation of near interface traps in 4H-SiC MOSFETs via drain current deep level transient spectroscopy
Hauck, M., Weisse, J., Lehmeyer, J., Pobegen, G., Weber, H. B., Krieger, M.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
First Principles Study of the Influence of the Local Steric Environment on the Incorporation and Migration of NO in a-SiO2
El-Sayed, A.M., Pobegen, Gregor, Shluger, Alexander L., Mistry, Manesh V., Cottom, Jonathon, Aichinger, Thomas, Patel, K.
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article