Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V
Matsumoto, Koh, Ubukata, Akinori, Guanxi, Piao, Yano, Yoshiki, Tabuchi, Toshiya, Koseki, Shuichi, Sodabanlu, Hassanet, Watanabe, Kentaro, Nakano, Yoshiaki, Sugiyama, Masakazu
Published in Journal of crystal growth (01.02.2019)
Published in Journal of crystal growth (01.02.2019)
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Journal Article
Improved electrical performance of MOCVD-grown GaN p-i-n diodes with high-low junction p-layers
Howell-Clark, Jennifer, Guo, Zhibo, Wetzel, Christian, Chow, T. Paul, Guanxi, Piao, Yano, Yoshiki, Tabuchi, Toshiya, Matsumoto, Koh
Published in Solid-state electronics (01.12.2019)
Published in Solid-state electronics (01.12.2019)
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Journal Article
Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells
Murotani, Hideaki, Nakatsuru, Keigo, Kurai, Satoshi, Okada, Narihito, Yano, Yoshiki, Koseki, Shuichi, Piao, Guanxi, Yamada, Yoichi
Published in Japanese Journal of Applied Physics (01.03.2023)
Published in Japanese Journal of Applied Physics (01.03.2023)
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Journal Article
Opportunities and challenges in GaN metal organic chemical vapor deposition for electron devices
Matsumoto, Koh, Yamaoka, Yuya, Ubukata, Akinori, Arimura, Tadanobu, Piao, Guanxi, Yano, Yoshiki, Tokunaga, Hiroki, Tabuchi, Toshiya
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Growth of Eu-doped GaN by gas source molecular beam epitaxy and its optical properties
Li, Zhiqiang, Bang, Hyungjin, Piao, Guanxi, Sawahata, Junji, Akimoto, Katsuhiro
Published in Journal of crystal growth (01.05.2002)
Published in Journal of crystal growth (01.05.2002)
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Journal Article
GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
Shimizu, Mitsuaki, Hirata, Yoshitaka, Piao, Guanxi, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.12.2004)
Published in Japanese Journal of Applied Physics (01.12.2004)
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Journal Article
High-speed growth of thick high-purity β-Ga2O3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy
Yoshinaga, Junya, Tozato, Haruka, Okuyama, Takahito, Sasaki, Shogo, Piao, Guanxi, Ikenaga, Kazutada, Goto, Ken, Ban, Yuzaburo, Kumagai, Yoshinao
Published in Applied physics express (01.09.2023)
Published in Applied physics express (01.09.2023)
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Journal Article
High-speed growth of thick high-purity β-Ga 2 O 3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy
Yoshinaga, Junya, Tozato, Haruka, Okuyama, Takahito, Sasaki, Shogo, Piao, Guanxi, Ikenaga, Kazutada, Goto, Ken, Ban, Yuzaburo, Kumagai, Yoshinao
Published in Applied physics express (01.09.2023)
Published in Applied physics express (01.09.2023)
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Journal Article
Discrete-Pulsed Current Time Method to Estimate Channel Thermal Resistance of GaN-Based Power Devices
Xu, Zheng, Mandal, Saptarshi, Gao, Jianyi, Surdi, Harshad, Li, Wenwen, Yamaoka, Yuya, Piao, Guanxi, Tabuchi, Toshiya, Li, Haoran, Matsumoto, Kou, Chowdhury, Srabanti
Published in IEEE transactions on electron devices (01.12.2018)
Published in IEEE transactions on electron devices (01.12.2018)
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Journal Article
Monolithically Integrated GaN LED/Quasi-Vertical Power U-Shaped Trench-Gate MOSFET Pairs Using Selective Epi Removal
Guo, Zhibo, Bulsara, Mayank, Chow, T. Paul, Hitchcock, Collin, Wetzel, Christian, Karlicek, Robert F., Piao, Guanxi, Yano, Yoshiki, Koseki, Shuuichi, Tabuchi, Toshiya, Matsumoto, Koh
Published in IEEE electron device letters (01.11.2019)
Published in IEEE electron device letters (01.11.2019)
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Journal Article
Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors for Power and Optoelectronic Integrated Circuits
Guo, Zhibo, Hitchcock, Collin, Karlicek, Robert F., Piao, Guanxi, Yano, Yoshiki, Koseki, Shuuichi, Tabuchi, Toshiya, Matsumoto, Koh, Bulsara, Mayank, Chow, T. Paul
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Integrable Quasivertical GaN U‐Shaped Trench‐Gate Metal‐Oxide‐Semiconductor Field‐Effect Transistors for Power and Optoelectronic Integrated Circuits
Guo, Zhibo, Hitchcock, Collin, Karlicek, Robert F., Piao, Guanxi, Yano, Yoshiki, Koseki, Shuuichi, Tabuchi, Toshiya, Matsumoto, Koh, Bulsara, Mayank, Chow, T. Paul
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy
Li, Zhiqiang, Bang, Hyungjin, Piao, Guanxi, Sawahata, Junji, Akimoto, Katsuhiro, Kinoshita, Hiroyuki, Watanabe, Kenich
Published in Journal of crystal growth (2002)
Published in Journal of crystal growth (2002)
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Journal Article
Recess gate AlGaN/GaN HEMTs using overlap gate metal structure
Ide, Toshihide, Piao, Guanxi, Yano, Yoshiki, Shimizu, Mitsuaki
Published in Physica status solidi. C (01.07.2010)
Published in Physica status solidi. C (01.07.2010)
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Journal Article
Three-Zone Junction Termination Extensions for Improved Performance of Vertical GaN PN Diodes
Duan, Yu, Guanxi, Piao, Ikenaga, Kazutada, Tokunaga, Hiroki, Koseki, Shuuichi, Bulsara, Mayank, Fay, Patrick
Published in 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (18.04.2022)
Published in 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (18.04.2022)
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Conference Proceeding
DC characteristics of AlGaN/GaN high electron mobility transistors
Inada, Masaki, Nakajima, Akira, Piao, Guanxi, Shimizu, Mitsuaki, Yano, Yoshiki, Ubukata, Akinori
Published in Physica status solidi. C (01.07.2008)
Published in Physica status solidi. C (01.07.2008)
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Journal Article
Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors
Ide, Toshihide, Shimizu, Mitsuaki, Nakajima, Akira, Inada, Masaki, Yagi, Shuichi, Piao, Guanxi, Yano, Yoshiki, Akutsu, Nakao, Okumura, Hajime, Arai, Kazuo
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
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Journal Article
Normally-off operation in AlGaN/GaN/AlGaN double heterojunction field effect transistors
Shimizu, Mitsuaki, Inada, Masaki, Yagi, Shuichi, Piao, Guanxi, Okumura, Hajime, Arai, Kazuo, Yano, Yoshiki, Akutsu, Nakao
Published in Physica status solidi. C (01.06.2007)
Published in Physica status solidi. C (01.06.2007)
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Journal Article
Low Specific On-Resistance AlGaN/GaN HEMT on Sapphire Substrate
Inada, M., Yagi, S., Yamamoto, Y., Piao, G., Shimizu, M., Okumura, H., Arai, K.
Published in 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (2006)
Published in 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (2006)
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Conference Proceeding