In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(001)-4×6 surface
Chang, Y.H., Huang, M.L., Chang, P., Shen, J.Y., Chen, B.R., Hsu, C.L., Pi, T.W., Hong, M., Kwo, J.
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs
CHANG, Y. H, HUANG, M. L, CHANG, P, LIN, C. A, CHU, Y. J, CHEN, B. R, HSU, C. L, KWO, J, PI, T. W, HONG, M
Published in Microelectronic engineering (01.04.2011)
Published in Microelectronic engineering (01.04.2011)
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Molecular beam epitaxy, atomic layer deposition, and multiple functions connected via ultra-high vacuum
Lin, K.Y., Wan, H.W., Chen, K.H.M., Fanchiang, Y.T., Chen, W.S., Lin, Y.H., Cheng, Y.T., Chen, C.C., Lin, H.Y., Young, L.B., Cheng, C.P., Pi, T.W., Kwo, J., Hong, M.
Published in Journal of crystal growth (15.04.2019)
Published in Journal of crystal growth (15.04.2019)
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Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition
Lin, Y.H., Lin, K.Y., Hsueh, W.J., Young, L.B., Chang, T.W., Chyi, J.I., Pi, T.W., Kwo, J., Hong, M.
Published in Journal of crystal growth (01.11.2017)
Published in Journal of crystal growth (01.11.2017)
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GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3
Wan, H.W., Lin, K.Y., Cheng, C.K., Su, Y.K., Lee, W.C., Hsu, C.H., Pi, T.W., Kwo, J., Hong, M.
Published in Journal of crystal growth (01.11.2017)
Published in Journal of crystal growth (01.11.2017)
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Effective surface passivation of In0.53Ga0.47As(001) using molecular beam epitaxy and atomic layer deposited HfO2 – A comparative study
Hong, M., Wan, H.W., Chang, P., Lin, T.D., Chang, Y.H., Lee, W.C., Pi, T.W., Kwo, J.
Published in Journal of crystal growth (01.11.2017)
Published in Journal of crystal growth (01.11.2017)
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Surface atoms core-level shifts in single crystal GaAs surfaces: Interactions with trimethylaluminum and water prepared by atomic layer deposition
Pi, T.W., Lin, H.Y., Chiang, T.H., Liu, Y.T., Chang, Y.C., Lin, T.D., Wertheim, G.K., Kwo, J., Hong, M.
Published in Applied surface science (01.11.2013)
Published in Applied surface science (01.11.2013)
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Valence band electronic structure of Nd1−xYxMnO3 using X-ray absorption, photoemission and GGA+U calculations
Balasubramanian, Padmanabhan, Nair, Harikrishnan. S., Tsai, H.M., Bhattacharjee, S., Liu, M.T., Yadav, Ruchika, Chiou, J.W., Lin, H.J., Pi, T.W., Tsai, M.H., Elizabeth, Suja, Pao, C.W., Wang, B.Y., Chuang, C.H., Pong, W.F.
Published in Journal of electron spectroscopy and related phenomena (01.08.2013)
Published in Journal of electron spectroscopy and related phenomena (01.08.2013)
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In situ atomic layer deposition and synchrotron-radiation photoemission study of Al 2O 3 on pristine n-GaAs(0 0 1)-4 × 6 surface
Chang, Y.H., Huang, M.L., Chang, P., Shen, J.Y., Chen, B.R., Hsu, C.L., Pi, T.W., Hong, M., Kwo, J.
Published in Microelectronic engineering (2011)
Published in Microelectronic engineering (2011)
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Journal Article
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al 2O 3 on freshly molecular beam epitaxy grown GaAs
Chang, Y.H., Huang, M.L., Chang, P., Lin, C.A., Chu, Y.J., Chen, B.R., Hsu, C.L., Kwo, J., Pi, T.W., Hong, M.
Published in Microelectronic engineering (2011)
Published in Microelectronic engineering (2011)
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Journal Article
Initial stages of ultra thin Ti film growth on Si(1 1 1)-7×7 surface
Hsu, H.F., Lu, M.C., Fang, C.K., Chen, L.J., Hsiao, H.L., Pi, T.W.
Published in Thin solid films (20.03.2003)
Published in Thin solid films (20.03.2003)
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