The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings
Saguy, C., Kalish, R., Chevallier, J., Jomard, F., Cytermann, C., Philosoph, B., Kociniewski, T., Ballutaud, D., Baron, C., Deneuville, A.
Published in Diamond and related materials (01.08.2007)
Published in Diamond and related materials (01.08.2007)
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Journal Article
Improvement of the electrical properties of compensated phosphorus-doped diamond by high temperature annealing
Chevallier, J., Saguy, C., Barbé, M., Jomard, F., Ballutaud, D., Kociniewski, T., Philosoph, B., Fizgeer, B., Koizumi, S.
Published in Physica status solidi. A, Applications and materials science (01.09.2005)
Published in Physica status solidi. A, Applications and materials science (01.09.2005)
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Journal Article
Nitrogen doping of diamond by ion implantation
Kalish, R., Uzan-Saguy, C., Philosoph, B., Richter, V., Lagrange, J.P., Gheeraert, E., Deneuville, A., Collins, A.T.
Published in Diamond and related materials (01.03.1997)
Published in Diamond and related materials (01.03.1997)
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