Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses
Pershenkov, V.S., Ullán, M., Wilder, M., Spieler, H., Spencer, E., Rescia, S., Newcomer, F.M., Martinez-McKinney, F., Kononenko, W., Grillo, A.A., Díez, S.
Published in Microelectronics and reliability (01.11.2014)
Published in Microelectronics and reliability (01.11.2014)
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Journal Article
Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator
Bakerenkov, A.S., Belyakov, V.V., Kozyukov, A.E., Pershenkov, V.S., Solomatin, A.V., Shurenkov, V.V.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (11.02.2015)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (11.02.2015)
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Journal Article
Exhaled Breath Analysis in Diagnostics of Cardiovascular Diseases
Bykova, A A, Malinovskaya, L K, Chomakhidze, P Sh, Trushina, O V, Shaltaeva, Y R, Belyakov, V V, Golovin, A V, Pershenkov, V S, Syrkin, A L, Betelin, V B, Kopylov, Ph Yu
Published in Kardiologiia (19.07.2019)
Published in Kardiologiia (19.07.2019)
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Journal Article
ELDRS in a wide range of total doses
Pershenkov, V S, Savchenkov, D V, Telets, V A
Published in IOP conference series. Materials Science and Engineering (01.10.2016)
Published in IOP conference series. Materials Science and Engineering (01.10.2016)
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Journal Article
Low temperature radiation response of SiGe HBTs
Bakerenkov, A S, Felitsyn, V A, Rodin, A S, Bursian, Yu D, Pershenkov, V S
Published in IOP conference series. Materials Science and Engineering (18.02.2019)
Published in IOP conference series. Materials Science and Engineering (18.02.2019)
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Journal Article
The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices
Pershenkov, V.S., Maslov, V.B., Cherepko, S.V., Shvetzov-Shilovsky, I.N., Belyakov, V.V., Sogoyan, A.V., Rusanovsky, V.I., Ulimov, V.N., Emelianov, V.V., Nasibullin, V.S.
Published in IEEE transactions on nuclear science (01.12.1997)
Published in IEEE transactions on nuclear science (01.12.1997)
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Journal Article
Mechanism of the Saturation of the Radiation Induced Interface Trap Buildup
Bakerenkov, A.S., Shurenkov, V.V., Pershenkov, V.S., Belyakov, V.V., Solomatin, A.V.
Published in Applied Mechanics and Materials (01.06.2014)
Published in Applied Mechanics and Materials (01.06.2014)
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Journal Article
Effect of emitter-base bias during pre-irradiation infrared illumination on the radiation response of bipolar transistors
Pershenkov, V.S., Bashin, A.Y., Zebrev, G.I., Avdeev, S.V., Belyakov, V.V., Ulimov, V.N., Emelianov, V.V.
Published in IEEE transactions on nuclear science (01.12.2002)
Published in IEEE transactions on nuclear science (01.12.2002)
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Journal Article
Proton Transfer Reaction Mass Spectrometry of Exhaled Breath in Diagnostics of Heart Failure
Kopylov, Ph Yu, Syrkin, A L, Chomakhidze, P Sh, Bykova, A A, Yu Shhekochihin, D, Shaltaeva, Yu R, Belyakov, V V, Pershenkov, V S, Samotaev, N N, Golovin, A V, Vasil'ev, V K, Malkin, E K, Gromov, E A, Ivanov, I A, Lipatov, D Ju, Yakovlev, D Ju, Betelin, V B
Published in Kardiologiia (01.05.2016)
Published in Kardiologiia (01.05.2016)
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Journal Article
Radiation Response of Bipolar Transistors at Various Irradiation Temperatures and Electric Biases: Modeling and Experiment
Zebrev, G.I., Pavlov, D.Y., Pershenkov, V.S., Nikiforov, A.Y., Sogoyan, A.V., Boychenko, D.V., Ulimov, V.N., Emelyanov, V.V.
Published in IEEE transactions on nuclear science (01.08.2006)
Published in IEEE transactions on nuclear science (01.08.2006)
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Journal Article
IC’s radiation effects modeling and estimation
Belyakov, V.V, Chumakov, A.I, Nikiforov, A.Y, Pershenkov, V.S, Skorobogatov, P.K, Sogoyan, A.V
Published in Microelectronics and reliability (01.12.2000)
Published in Microelectronics and reliability (01.12.2000)
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Journal Article
Effect of aging on radiation response of bipolar transistors
Pershenkov, V.S., Slesarev, A.Y., Sogoyan, A.V., Belyakov, V.V., Kekukh, V.B., Bashin, A.Y., Ivashin, D.V., Motchkine, V.S., Ulimov, V.N., Emelianov, V.V.
Published in IEEE transactions on nuclear science (01.12.2001)
Published in IEEE transactions on nuclear science (01.12.2001)
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Journal Article
Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures
Pershenkov, V.S., Belyakov, V.V., Shalnov, A.V.
Published in IEEE transactions on nuclear science (01.12.1994)
Published in IEEE transactions on nuclear science (01.12.1994)
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Journal Article
Conference Proceeding
X-ray and UV controlled adjustment of MOS VLSI circuits threshold voltages
Levin, M.N, Gitlin, V.R, Kadmensky, S.G, Ostrouhov, S.S, Pershenkov, V.S
Published in Microelectronics and reliability (2001)
Published in Microelectronics and reliability (2001)
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Journal Article
The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs
Pershenkov, V.S., Chirokov, M.S., Bretchko, P.T., Fastenko, P.O., Baev, V.K., Belyakov, V.V.
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01.12.1994)
Published in IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) (01.12.1994)
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Journal Article
Conference Proceeding