Innovative method to study irradiation damage in silicon pixel detectors for HEP: TLM
Saleem-Rashid, T., Lounis, A., Perrossier, J.L., Hohov, D., Coudevylle, J.R., Villebasse, C., Isac, N.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01.04.2020)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01.04.2020)
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Journal Article
Electrical properties of 1.55 µm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime
Mangeney, J., Joulaud, L., Decobert, J., Lourtioz, J.-M., Perrossier, J.L., Cabaret, S., Crozat, P.
Published in Electronics letters (17.04.2003)
Published in Electronics letters (17.04.2003)
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Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys
Hattab, A, Perrossier, J.L, Meyer, F, Barthula, M, Osten, H.J, Griesche, J
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Conference Proceeding
What is the role of the metal on the Fermi-level position at the interface with IV-IV compounds?
Aubry-Fortuna, V., Perrossier, J.-L., Mamor, M., Meyer, F., Frojdh, C., Thungstrom, G., Petersson, C.S., Bodnar, S., Regolini, J.L.
Published in Microelectronic engineering (1997)
Published in Microelectronic engineering (1997)
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Long-term stability of InP MIS devices
Tardy, J., Thomas, I., Viktorovitch, P., Gendry, M., Perrossier, J.L., Santinelli, C., Besland, M.P., Louis, P., Post, G.
Published in Applied surface science (01.06.1991)
Published in Applied surface science (01.06.1991)
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Conference Proceeding